IPA65R380E6 Datasheet and Replacement
Type Designator: IPA65R380E6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 41 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO220FP
IPA65R380E6 substitution
IPA65R380E6 Datasheet (PDF)
ipa65r380e6.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPA65R380E6FEATURESWith TO-220F packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
ipd65r380c6 ipi65r380c6 ipb65r380c6 ipp65r380c6 ipa65r380c6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPx65R380C6 Data SheetRev. 2.1, 2011-02-17Rev. 2.2, 2013-07-31Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPD65R380C6, IPI65R380C6IPB65R380C6, IPP65R380C6IPA65R380C61 DescriptionCoolMOS is a revolutionary technology for high voltage power MO
Datasheet: IPA60R600C6 , IPA60R600CP , IPA60R600E6 , IPA60R750E6 , IPA60R950C6 , IPA65R280C6 , IPA65R280E6 , IPA65R380C6 , 2N7000 , IPA65R600C6 , IPA65R600E6 , IPA65R660CFD , IPA90R1K0C3 , IPA90R1K2C3 , IPA90R340C3 , IPA90R500C3 , IPA90R800C3 .
History: IPA90R1K0C3
Keywords - IPA65R380E6 MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IPA90R1K0C3
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