IPA65R380E6 PDF and Equivalents Search

 

IPA65R380E6 Specs and Replacement

Type Designator: IPA65R380E6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 41 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO220FP

IPA65R380E6 substitution

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IPA65R380E6 datasheet

 ..1. Size:1898K  infineon
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IPA65R380E6

MOSFET + =L9D - PA... See More ⇒

 ..2. Size:1960K  infineon
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IPA65R380E6

MOSFET + =L9D - PA... See More ⇒

 ..3. Size:202K  inchange semiconductor
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IPA65R380E6

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPA65R380E6 FEATURES With TO-220F packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA... See More ⇒

 5.1. Size:1946K  infineon
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IPA65R380E6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS C6 Power Transistor IPx65R380C6 Data Sheet Rev. 2.1, 2011-02-17 Rev. 2.2, 2013-07-31 Final Industrial & Multimarket 650V CoolMOS C6 Power Transistor IPD65R380C6, IPI65R380C6 IPB65R380C6, IPP65R380C6 IPA65R380C6 1 Description CoolMOS is a revolutionary technology for high voltage power MO... See More ⇒

Detailed specifications: IPA60R600C6, IPA60R600CP, IPA60R600E6, IPA60R750E6, IPA60R950C6, IPA65R280C6, IPA65R280E6, IPA65R380C6, 2N7000, IPA65R600C6, IPA65R600E6, IPA65R660CFD, IPA90R1K0C3, IPA90R1K2C3, IPA90R340C3, IPA90R500C3, IPA90R800C3

Keywords - IPA65R380E6 MOSFET specs

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