IPB180N04S3-02 PDF and Equivalents Search

 

IPB180N04S3-02 Specs and Replacement

Type Designator: IPB180N04S3-02

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 3000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm

Package: TO263-7

IPB180N04S3-02 substitution

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IPB180N04S3-02 datasheet

 ..1. Size:183K  infineon
ipb180n04s3-02 ipb180n04s3-02 ds 1 0.pdf pdf_icon

IPB180N04S3-02

IPB180N04S3-02 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 1.5 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Marking Package IPB180N04S3-02 PG-... See More ⇒

 4.1. Size:351K  infineon
ipb180n04s4-00.pdf pdf_icon

IPB180N04S3-02

IPB180N04S4-00 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on) 0.98 mW ID 180 A Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N0400 Maxim... See More ⇒

 4.2. Size:162K  infineon
ipb180n04s4-00 ds 1 0.pdf pdf_icon

IPB180N04S3-02

IPB180N04S4-00 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 0.98 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N040... See More ⇒

 4.3. Size:162K  infineon
ipb180n04s4-h0 ipb180n04s4-h0 ds 1 0.pdf pdf_icon

IPB180N04S3-02

IPB180N04S4-H0 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.1 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-H0 PG-TO263-7-3 4N04H0... See More ⇒

Detailed specifications: IPB100N10S3-05, IPB100P03P3L-04, IPB120N04S3-02, IPB120N06S4-03, IPB160N04S2-03, IPB160N04S2L-03, IPB160N04S3-H2, IPB180N03S4L-H0, 5N65, IPB180N04S4-00, IPB180N06S4-H1, IPB22N03S4L-15, IPB45N06S4-09, IPB45N06S4L-08, IPB45P03P4L-11, IPB47N10S-33, IPB47N10SL-26

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