All MOSFET. IPB180N04S3-02 Datasheet

 

IPB180N04S3-02 Datasheet and Replacement


   Type Designator: IPB180N04S3-02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 3000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
   Package: TO263-7
 

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IPB180N04S3-02 Datasheet (PDF)

 ..1. Size:183K  infineon
 ipb180n04s3-02 ipb180n04s3-02 ds 1 0.pdf pdf_icon

IPB180N04S3-02

IPB180N04S3-02OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 1.5mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType MarkingPackageIPB180N04S3-02 PG-

 4.1. Size:351K  infineon
 ipb180n04s4-00.pdf pdf_icon

IPB180N04S3-02

IPB180N04S4-00OptiMOS-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 0.98mWID 180 AFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-00 PG-TO263-7-3 4N0400Maxim

 4.2. Size:162K  infineon
 ipb180n04s4-00 ds 1 0.pdf pdf_icon

IPB180N04S3-02

IPB180N04S4-00OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 0.98mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-00 PG-TO263-7-3 4N040

 4.3. Size:162K  infineon
 ipb180n04s4-h0 ipb180n04s4-h0 ds 1 0.pdf pdf_icon

IPB180N04S3-02

IPB180N04S4-H0OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.1mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-H0 PG-TO263-7-3 4N04H0

SHOW MORE

Datasheet: IPB100N10S3-05 , IPB100P03P3L-04 , IPB120N04S3-02 , IPB120N06S4-03 , IPB160N04S2-03 , IPB160N04S2L-03 , IPB160N04S3-H2 , IPB180N03S4L-H0 , 5N65 , IPB180N04S4-00 , IPB180N06S4-H1 , IPB22N03S4L-15 , IPB45N06S4-09 , IPB45N06S4L-08 , IPB45P03P4L-11 , IPB47N10S-33 , IPB47N10SL-26 .

History: FDS3580 | FQL40N50F | 2SK2843 | FDP047AN08A0 | NCEP058N85D | FQI8N60C | NCEP055N85D

Keywords - IPB180N04S3-02 MOSFET datasheet

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 IPB180N04S3-02 replacement

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