All MOSFET. IPB45N06S4-09 Datasheet

 

IPB45N06S4-09 Datasheet and Replacement


   Type Designator: IPB45N06S4-09
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 715 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0091 Ohm
   Package: TO263
      - MOSFET Cross-Reference Search

 

IPB45N06S4-09 Datasheet (PDF)

 ..1. Size:159K  infineon
ipb45n06s4-09 ipi45n06s4-09 ipp45n06s4-09.pdf pdf_icon

IPB45N06S4-09

IPB45N06S4-09IPI45N06S4-09, IPP45N06S4-09OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 9.2mDS(on),max I 45 ADFeatures N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB45N06S4-09 PG-TO263-

 4.1. Size:170K  infineon
ipb45n06s4l-08 ipi45n06s4l-08 ipp45n06s4l-08 ipp45n06s4l ipb45n06s4l ipi45n06s4l-08.pdf pdf_icon

IPB45N06S4-09

IPB45N06S4L-08IPI45N06S4L-08, IPP45N06S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 7.9mDS(on),max I 45 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 5.1. Size:186K  infineon
ipb45n06s3-16.pdf pdf_icon

IPB45N06S4-09

IPB45N06S3-16IPI45N06S3-16, IPP45N06S3-16OptiMOS-T2 Power-TransistorProduct SummaryV 55 VDSR (SMD version) 15.4mDS(on),maxI 45 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanch

 7.1. Size:159K  infineon
ipp45n04s4l-08 ipb45n04s4l-08 ipi45n04s4l-08.pdf pdf_icon

IPB45N06S4-09

IPB45N04S4L-08IPI45N04S4L-08, IPP45N04S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 7.6mDS(on),max I 45 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTyp

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MTH5N95 | IRFB3004GPBF | BRCS200P03DP | SIF10N40C | MDP6N60TH | TSM4424CS | LKK47-06C5

Keywords - IPB45N06S4-09 MOSFET datasheet

 IPB45N06S4-09 cross reference
 IPB45N06S4-09 equivalent finder
 IPB45N06S4-09 lookup
 IPB45N06S4-09 substitution
 IPB45N06S4-09 replacement

 

 
Back to Top

 


 
.