All MOSFET. IPB47N10SL-26 Datasheet

 

IPB47N10SL-26 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPB47N10SL-26
   Marking Code: N10L26
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 175 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 47 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 90 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 375 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: TO263

 IPB47N10SL-26 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB47N10SL-26 Datasheet (PDF)

 ..1. Size:3643K  infineon
 ipb47n10sl-26 ipp47n10sl-26 ipi47n10sl-26.pdf

IPB47N10SL-26 IPB47N10SL-26

IPI47N10SL-26IPP47N10SL-26, IPB47N10SL-26SIPMOS=Power-Transistor===Product SummaryFeatureVDS100 V N-ChannelRDS(on) 26 m Enhancement modeID 47 A Logic LevelP-TO262-3-1 P-TO263-3-2 P-TO220-3-1 175C operating temperature Avalanche rated dv/dt rated Green package (lead free)Type Package Ordering Code MarkingIPP47N10SL-26 PG-TO220-3-1 S

 5.1. Size:541K  infineon
 ipi47n10s-33 ipp47n10s-33 ipb47n10s-33.pdf

IPB47N10SL-26 IPB47N10SL-26

IPI47N10S-33IPP47N10S-33, IPB47N10S-33SIPMOS=Power-Transistor===Product SummaryFeatureVDS100 V N-ChannelRDS(on) 33 m Enhancement modeID 47 A 175C operating temperatureP-TO262-3-1 P-TO263-3-2 P-TO220-3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingIPP47N10S-33 PG-TO220-3-1 SP0002-25706N1033IPB47N10S-33 PG-TO263-3-2 SP00

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STA6968

 

 
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