IPB80N03S4L-02 Datasheet and Replacement
Type Designator: IPB80N03S4L-02
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 136
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Id| ⓘ - Maximum Drain Current: 80
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
tr ⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 1900
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024
Ohm
Package:
TO263
IPB80N03S4L-02 substitution
-
MOSFET ⓘ Cross-Reference Search
IPB80N03S4L-02 Datasheet (PDF)
..1. Size:187K infineon
ipb80n03s4l-02 ipi80n03s4l-03 ipp80n03s4l-03 ipb80n03s4l-02 ipp i80n03s4l 03 ds.pdf 
IPB80N03S4L-02IPI80N03S4L-03, IPP80N03S4L-03OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR (SMD version) 2.4mDS(on),max I 80 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low
1.1. Size:192K infineon
ipb80n03s4l-03 ipi80n03s4l-04 ipp80n03s4l-04.pdf
IPB80N03S4L-03IPI80N03S4L-04, IPP80N03S4L-04OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR (SMD version) 3.3mDS(on),max I 80 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low
7.1. Size:164K 1
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf
IPB80N08S2-07IPP80N08S2-07, IPI80N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 7.1mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)
7.2. Size:155K infineon
ipp80n06s2-05 ipb80n06s2-05.pdf
IPB80N06S2-05IPP80N06S2-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 4.8mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType
7.3. Size:158K infineon
ipp80n06s2l-05 ipb80n06s2l-05 ipi80n06s2l-05.pdf
IPB80N06S2L-05IPI80N06S2L-05, IPP80N06S2L-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 4.5mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra l
7.4. Size:160K infineon
ipb80n04s4-04 ipi80n04s4-04 ipp80n04s4-04 ipp80n04s4-04 ipb80n04s4-04 ipi80n04s4-04.pdf
IPB80N04S4-04IPI80N04S4-04, IPP80N04S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 4.2mDS(on),max I 80 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P
7.5. Size:153K infineon
ipp80n04s2l-03 ipb80n04s2l-03.pdf
IPB80N04S2L-03IPP80N04S2L-03OptiMOS Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel Logic Level - Enhancement modeR (SMD version) 3.1mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch
7.6. Size:187K infineon
ipb80n04s3-04 ipi80n04s3-04 ipp80n04s3-04 ipp80n04s3 ipb80n04s3 ipi80n04s3-04.pdf
IPB80N04S3-04IPI80N04S3-04, IPP80N04S3-04OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 3.8mDS(on),maxI 80 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche
7.8. Size:228K infineon
ipb80n08s4-06 ipi80n08s4-06 ipp80n08s4-06.pdf
IPB80N08S4-06IPI80N08S4-06, IPP80N08S4-06OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR (SMD version) 5.5mWDS(on),maxI 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTyp
7.11. Size:159K infineon
ipb80n04s2-04 ipp80n04s2-04 ipi80n04s2-04 ipp80n04s2-04 ipb80n04s2-04 ipi80n04s2-04.pdf
IPB80N04S2-04IPP80N04S2-04, IPI80N04S2-04OptiMOS Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel - Enhancement modeR (SMD version) 3.4mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)
7.12. Size:155K infineon
ipb80n06s2l-09 ipp80n06s2l-09 ipp80n06s2l-09 ipb80n06s2l-09.pdf
IPB80N06S2L-09IPP80N06S2L-09OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 8.3mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch
7.13. Size:158K infineon
ipb80n04s4-03 ipi80n04s4-03 ipp80n04s4-03 ipp80n04s4-03 ipb80n04s4-03 ipi80n04s4-03.pdf
IPB80N04S4-03IPI80N04S4-03, IPP80N04S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 3.3mDS(on),max I 80 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType P
7.14. Size:158K infineon
ipb80n06s2-08 ipp80n06s2-08 ipi80n06s2-08 ipp80n06s2-08 ipb80n06s2-08 ipi80n06s2-08.pdf
IPB80N06S2-08IPP80N06S2-08, IPI80N06S2-08OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)
7.15. Size:174K infineon
ipi80n06s4l-05 ipp80n06s4l-05 ipb80n06s4l-05.pdf
IPB80N06S4L-05IPI80N06S4L-05, IPP80N06S4L-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 4.8mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
7.16. Size:175K infineon
ipi80n06s4-07 ipp80n06s4-07 ipb80n06s4-07.pdf
IPB80N06S4-07IPI80N06S4-07, IPP80N06S4-07OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 7.1mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedT
7.17. Size:158K infineon
ipb80n06s2-07 ipp80n06s2-07 ipi80n06s2-07 ipp80n06s2-07 ipb80n06s2-07 ipi80n06s2-07.pdf
IPB80N06S2-07IPP80N06S2-07, IPI80N06S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 6.3mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)
7.18. Size:155K infineon
ipb80n06s2l-07 ipp80n06s2l-07 ipp80n06s2l-07 ipb80n06s2l-07.pdf
IPB80N06S2L-07IPP80N06S2L-07OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 6.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch
7.19. Size:171K infineon
ipb80n06s4-07 ipi80n06s4-07 ipp80n06s4-07.pdf
IPB80N06S4-07IPI80N06S4-07, IPP80N06S4-07OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 7.1mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedT
7.20. Size:155K infineon
ipb80n06s2-h5 ipp80n06s2-h5 ipp80n06s2-h5 ipb80n06s2-h5.pdf
IPB80N06S2-H5IPP80N06S2-H5OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 5.2mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType
7.21. Size:190K infineon
ipb80n04s2-h4 ipp80n04s2-h4 ipi80n04s2-h4 ipp80n04s2 ipb80n04s2 ipi80n04s2-h4.pdf
IPB80N04S2-H4IPP80N04S2-H4, IPI80N04S2-H4OptiMOS Power-TransistorProduct SummaryV 40 VDSR (SMD version) 3.7mDS(on),maxI 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Ultra low Rds(on) 100% Avalanche tested Gre
7.22. Size:189K infineon
ipb80n06s3l-05.pdf
IPB80N06S3L-05IPI80N06S3L-05, IPP80N06S3L-05OptiMOS-T2 Power-TransistorProduct SummaryV 55 VDSR (SMD version) 4.5mDS(on),maxI 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalan
7.23. Size:170K infineon
ipb80n06s4l-07 ipi80n06s4l-07 ipp80n06s4l-07 ipp80n06s4l ipb80n06s4l ipi80n06s4l-07.pdf
IPB80N06S4L-07IPI80N06S4L-07, IPP80N06S4L-07OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 6.4mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
7.24. Size:157K infineon
ipb80n08s2l-07 ipp80n08s2l-07.pdf
IPB80N08S2L-07IPP80N08S2L-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel Logic Level - Enhancement modeR (SMD version) 6.8mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch
7.25. Size:170K infineon
ipb80n06s4-05 ipi80n06s4-05 ipp80n06s4-05 ipp80n06s4 ipb80n06s4 ipi80n06s4-05.pdf
IPB80N06S4-05IPI80N06S4-05, IPP80N06S4-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 5.4mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedT
7.26. Size:155K infineon
ipp80n06s2l-h5 ipb80n06s2l-h5.pdf
IPB80N06S2L-H5IPP80N06S2L-H5OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 4.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch
7.27. Size:188K infineon
ipb80n04s3-06 ipi80n04s3-06 ipp80n04s3-06 ipp80n04s3 ipb80n04s3 ipi80n04s3.pdf
IPB80N04S3-06IPI80N04S3-06, IPP80N04S3-06OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 5.4mDS(on),maxI 80 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche t
7.28. Size:170K infineon
ipb80n06s4l-05 ipi80n06s4l-05 ipp80n06s4l-05.pdf
IPB80N06S4L-05IPI80N06S4L-05, IPP80N06S4L-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 4.8mDS(on),max I 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
7.29. Size:164K infineon
ipb80n08s2-07.pdf
IPB80N08S2-07IPP80N08S2-07, IPI80N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 7.1mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)
7.30. Size:169K infineon
ipb80n04s3-h4 ipi80n04s3-h4 ipp80n04s3-h4.pdf
IPB80N04S3-H4IPI80N04S3-H4, IPP80N04S3-H4OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 4.5mDS(on),maxI 80 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche
7.31. Size:155K infineon
ipb80n06s2-09 ipp80n06s2-09 ipp80n06s2-09 ipb80n06s2-09.pdf
IPB80N06S2-09IPP80N06S2-09OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 8.8mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType
7.32. Size:160K infineon
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf
IPB80N08S2-07IPP80N08S2-07, IPI80N08S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR (SMD version) 7.1mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)
7.33. Size:155K infineon
ipb80n06s2l-06 ipp80n06s2l-06 ipp80n06s2l-06 ipb80n06s2l-06.pdf
IPB80N06S2L-06IPP80N06S2L-06OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 6.3mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch
7.34. Size:339K inchange semiconductor
ipb80n04s2-04.pdf
isc N-Channel MOSFET Transistor IPB80N04S2-04FEATURESDrain Current I 80A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 3.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingSwitching regulator, DC-DC conve
Datasheet: IPB47N10S-33
, IPB47N10SL-26
, IPB50N10S3L-16
, IPB70N04S3-07
, IPB70N10S3-12
, IPB70N10S3L-12
, IPB70N10SL-16
, IPB77N06S2-12
, P0903BDG
, IPB80N03S4L-03
, IPB80N04S2-04
, IPB80N04S2-H4
, IPB80N04S2L-03
, IPB80N04S3-03
, IPB80N04S3-04
, IPB80N04S3-06
, IPB80N04S3-H4
.
History: AM50N10-14I
| SPI20N65C3
| 3N65LU
| STN3414
| BUK9K18-40E
| CS6N70F
| YJG90G10A
Keywords - IPB80N03S4L-02 MOSFET datasheet
IPB80N03S4L-02 cross reference
IPB80N03S4L-02 equivalent finder
IPB80N03S4L-02 lookup
IPB80N03S4L-02 substitution
IPB80N03S4L-02 replacement
