All MOSFET. IPB80N04S2-H4 Datasheet

 

IPB80N04S2-H4 Datasheet and Replacement


   Type Designator: IPB80N04S2-H4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 1800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: TO263
 

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IPB80N04S2-H4 Datasheet (PDF)

 ..1. Size:190K  infineon
ipb80n04s2-h4 ipp80n04s2-h4 ipi80n04s2-h4 ipp80n04s2 ipb80n04s2 ipi80n04s2-h4.pdf pdf_icon

IPB80N04S2-H4

IPB80N04S2-H4IPP80N04S2-H4, IPI80N04S2-H4OptiMOS Power-TransistorProduct SummaryV 40 VDSR (SMD version) 3.7mDS(on),maxI 80 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Ultra low Rds(on) 100% Avalanche tested Gre

 3.1. Size:159K  infineon
ipb80n04s2-04 ipp80n04s2-04 ipi80n04s2-04 ipp80n04s2-04 ipb80n04s2-04 ipi80n04s2-04.pdf pdf_icon

IPB80N04S2-H4

IPB80N04S2-04IPP80N04S2-04, IPI80N04S2-04OptiMOS Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel - Enhancement modeR (SMD version) 3.4mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)

 3.2. Size:339K  inchange semiconductor
ipb80n04s2-04.pdf pdf_icon

IPB80N04S2-H4

isc N-Channel MOSFET Transistor IPB80N04S2-04FEATURESDrain Current I 80A@ T =25D CDrain Source Voltage: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 3.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingSwitching regulator, DC-DC conve

 4.1. Size:153K  infineon
ipp80n04s2l-03 ipb80n04s2l-03.pdf pdf_icon

IPB80N04S2-H4

IPB80N04S2L-03IPP80N04S2L-03OptiMOS Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel Logic Level - Enhancement modeR (SMD version) 3.1mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch

Datasheet: IPB70N04S3-07 , IPB70N10S3-12 , IPB70N10S3L-12 , IPB70N10SL-16 , IPB77N06S2-12 , IPB80N03S4L-02 , IPB80N03S4L-03 , IPB80N04S2-04 , 13N50 , IPB80N04S2L-03 , IPB80N04S3-03 , IPB80N04S3-04 , IPB80N04S3-06 , IPB80N04S3-H4 , IPB80N04S4-04 , IPB80N04S4L-04 , IPB80N06S2-05 .

History: STL75NH3LL | VBK5213N | KQB2N60 | QM4014D | IRFY210 | AO4440 | FQD7N10TM

Keywords - IPB80N04S2-H4 MOSFET datasheet

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