IPB80N04S2L-03 Specs and Replacement

Type Designator: IPB80N04S2L-03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 2200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm

Package: TO263

IPB80N04S2L-03 substitution

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IPB80N04S2L-03 datasheet

 ..1. Size:153K  infineon
 ipp80n04s2l-03 ipb80n04s2l-03.pdf pdf_icon

IPB80N04S2L-03

IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel Logic Level - Enhancement mode R (SMD version) 3.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch... See More ⇒

 4.1. Size:159K  infineon
 ipb80n04s2-04 ipp80n04s2-04 ipi80n04s2-04 ipp80n04s2-04 ipb80n04s2-04 ipi80n04s2-04.pdf pdf_icon

IPB80N04S2L-03

IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS Power-Transistor Product Summary Features V 40 V DS N-channel - Enhancement mode R (SMD version) 3.4 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) ... See More ⇒

 4.2. Size:190K  infineon
 ipb80n04s2-h4 ipp80n04s2-h4 ipi80n04s2-h4 ipp80n04s2 ipb80n04s2 ipi80n04s2-h4.pdf pdf_icon

IPB80N04S2L-03

IPB80N04S2-H4 IPP80N04S2-H4, IPI80N04S2-H4 OptiMOS Power-Transistor Product Summary V 40 V DS R (SMD version) 3.7 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Ultra low Rds(on) 100% Avalanche tested Gre... See More ⇒

 4.3. Size:339K  inchange semiconductor
 ipb80n04s2-04.pdf pdf_icon

IPB80N04S2L-03

isc N-Channel MOSFET Transistor IPB80N04S2-04 FEATURES Drain Current I 80A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 3.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching Switching regulator, DC-DC conve... See More ⇒

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Detailed specifications: IPB70N10S3-12, IPB70N10S3L-12, IPB70N10SL-16, IPB77N06S2-12, IPB80N03S4L-02, IPB80N03S4L-03, IPB80N04S2-04, IPB80N04S2-H4, RFP50N06, IPB80N04S3-03, IPB80N04S3-04, IPB80N04S3-06, IPB80N04S3-H4, IPB80N04S4-04, IPB80N04S4L-04, IPB80N06S2-05, IPB80N06S2-07

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