IPB80N06S2-07 Datasheet and Replacement
Type Designator: IPB80N06S2-07
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 880 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
Package: TO263
IPB80N06S2-07 substitution
IPB80N06S2-07 Datasheet (PDF)
ipb80n06s2-07 ipp80n06s2-07 ipi80n06s2-07 ipp80n06s2-07 ipb80n06s2-07 ipi80n06s2-07.pdf

IPB80N06S2-07IPP80N06S2-07, IPI80N06S2-07OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 6.3mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)
ipp80n06s2-05 ipb80n06s2-05.pdf

IPB80N06S2-05IPP80N06S2-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 4.8mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType
ipb80n06s2-08 ipp80n06s2-08 ipi80n06s2-08 ipp80n06s2-08 ipb80n06s2-08 ipi80n06s2-08.pdf

IPB80N06S2-08IPP80N06S2-08, IPI80N06S2-08OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on)
ipb80n06s2-09 ipp80n06s2-09 ipp80n06s2-09 ipb80n06s2-09.pdf

IPB80N06S2-09IPP80N06S2-09OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 8.8mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType
Datasheet: IPB80N04S2L-03 , IPB80N04S3-03 , IPB80N04S3-04 , IPB80N04S3-06 , IPB80N04S3-H4 , IPB80N04S4-04 , IPB80N04S4L-04 , IPB80N06S2-05 , AON6380 , IPB80N06S2-08 , IPB80N06S2-09 , IPB80N06S2-H5 , IPB80N06S2L-05 , IPB80N06S2L-06 , IPB80N06S2L-07 , IPB80N06S2L-09 , IPB80N06S2L-11 .
History: AO4449 | IPB34CN10N | FQD2N50TF | BLF145 | CSB4710 | P2610BT | DMN3035LWN
Keywords - IPB80N06S2-07 MOSFET datasheet
IPB80N06S2-07 cross reference
IPB80N06S2-07 equivalent finder
IPB80N06S2-07 lookup
IPB80N06S2-07 substitution
IPB80N06S2-07 replacement
History: AO4449 | IPB34CN10N | FQD2N50TF | BLF145 | CSB4710 | P2610BT | DMN3035LWN



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