IPB80N06S2-H5 PDF and Equivalents Search

 

IPB80N06S2-H5 PDF Specs and Replacement


   Type Designator: IPB80N06S2-H5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: TO263
 

 IPB80N06S2-H5 substitution

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IPB80N06S2-H5 PDF Specs

 ..1. Size:155K  infineon
 ipb80n06s2-h5 ipp80n06s2-h5 ipp80n06s2-h5 ipb80n06s2-h5.pdf pdf_icon

IPB80N06S2-H5

IPB80N06S2-H5 IPP80N06S2-H5 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 5.2 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type... See More ⇒

 3.1. Size:155K  infineon
 ipp80n06s2-05 ipb80n06s2-05.pdf pdf_icon

IPB80N06S2-H5

IPB80N06S2-05 IPP80N06S2-05 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 4.8 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type... See More ⇒

 3.2. Size:158K  infineon
 ipb80n06s2-08 ipp80n06s2-08 ipi80n06s2-08 ipp80n06s2-08 ipb80n06s2-08 ipi80n06s2-08.pdf pdf_icon

IPB80N06S2-H5

IPB80N06S2-08 IPP80N06S2-08, IPI80N06S2-08 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 7.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) ... See More ⇒

 3.3. Size:158K  infineon
 ipb80n06s2-07 ipp80n06s2-07 ipi80n06s2-07 ipp80n06s2-07 ipb80n06s2-07 ipi80n06s2-07.pdf pdf_icon

IPB80N06S2-H5

IPB80N06S2-07 IPP80N06S2-07, IPI80N06S2-07 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 6.3 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) ... See More ⇒

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Detailed specifications: IPB80N04S3-06 , IPB80N04S3-H4 , IPB80N04S4-04 , IPB80N04S4L-04 , IPB80N06S2-05 , IPB80N06S2-07 , IPB80N06S2-08 , IPB80N06S2-09 , P60NF06 , IPB80N06S2L-05 , IPB80N06S2L-06 , IPB80N06S2L-07 , IPB80N06S2L-09 , IPB80N06S2L-11 , IPB80N06S2L-H5 , IPB80N06S4-05 , IPB80N06S4-07 .

Keywords - IPB80N06S2-H5 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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