IPB80N06S2L-H5 Datasheet and Replacement
Type Designator: IPB80N06S2L-H5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 1060 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
Package: TO263
IPB80N06S2L-H5 substitution
IPB80N06S2L-H5 Datasheet (PDF)
ipp80n06s2l-h5 ipb80n06s2l-h5.pdf

IPB80N06S2L-H5IPP80N06S2L-H5OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 4.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch
ipp80n06s2l-05 ipb80n06s2l-05 ipi80n06s2l-05.pdf

IPB80N06S2L-05IPI80N06S2L-05, IPP80N06S2L-05OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 4.5mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra l
ipb80n06s2l-11 ipp80n06s2l-11 ipi80n06s2l-11 ipp80n06s2l-11 ipb80n06s2l-11 ipi80n06s2l-11.pdf

IPB80N06S2L-11IPP80N06S2L-11, IPI80N06S2L-11OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 10.7mWDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra lo
ipb80n06s2l-09 ipp80n06s2l-09 ipp80n06s2l-09 ipb80n06s2l-09.pdf

IPB80N06S2L-09IPP80N06S2L-09OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 8.3mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 PG-TO220-3-1 Green package (lead free) Ultra low Rds(on) 100% Avalanch
Datasheet: IPB80N06S2-08 , IPB80N06S2-09 , IPB80N06S2-H5 , IPB80N06S2L-05 , IPB80N06S2L-06 , IPB80N06S2L-07 , IPB80N06S2L-09 , IPB80N06S2L-11 , MMIS60R580P , IPB80N06S4-05 , IPB80N06S4-07 , IPB80N06S4L-05 , IPB80N06S4L-07 , IPB80N08S2-07 , IPB80N08S2L-07 , IPB80P03P4-05 , IPB80P03P4L-04 .
History: SI4497DY | BL8N50-I | MTP4835L3 | UTT6NP10G-S08-R | SIA537EDJ | TPD70R950C | QM2N7002E3K1
Keywords - IPB80N06S2L-H5 MOSFET datasheet
IPB80N06S2L-H5 cross reference
IPB80N06S2L-H5 equivalent finder
IPB80N06S2L-H5 lookup
IPB80N06S2L-H5 substitution
IPB80N06S2L-H5 replacement
History: SI4497DY | BL8N50-I | MTP4835L3 | UTT6NP10G-S08-R | SIA537EDJ | TPD70R950C | QM2N7002E3K1



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