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APT50M85JVR Specs and Replacement


   Type Designator: APT50M85JVR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 1240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT227
 

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APT50M85JVR Specs

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APT50M85JVR

APT50M85JVR 500V 50A 0.085 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche ... See More ⇒

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APT50M85JVR

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APT50M85JVR

APT50M85B2VFR APT50M85LVFR 500V 56A 0.085W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical ... See More ⇒

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APT50M85JVR

APT50M85B2VR APT50M85LVR 500V 56A 0.085W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificatio... See More ⇒

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Detailed specifications: APT5030AVR , APT5032CVR , APT5040CNR , APT50M50JVFR , APT50M50JVR , APT50M50PVR , APT50M60JN , APT50M85JVFR , 20N50 , APT6013JVR , APT6015B2VR , APT6015JN , APT6015JVR , APT6015LVR , APT6017WVR , APT6020LVR , APT6025BVR .

Keywords - APT50M85JVR MOSFET specs

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