IPB015N04NG Specs and Replacement

Type Designator: IPB015N04NG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 4000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm

Package: TO263

IPB015N04NG substitution

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IPB015N04NG datasheet

 ..1. Size:673K  infineon
 ipp015n04ng ipb015n04ng.pdf pdf_icon

IPB015N04NG

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 4.1. Size:670K  infineon
 ipp015n04n ipb015n04n.pdf pdf_icon

IPB015N04NG

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 4.2. Size:670K  infineon
 ipp015n04n6 ipb015n04n6.pdf pdf_icon

IPB015N04NG

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 4.3. Size:257K  inchange semiconductor
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IPB015N04NG

Isc N-Channel MOSFET Transistor IPB015N04N FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo... See More ⇒

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Detailed specifications: IPB80P03P4L-07, IPB90N04S4-02, IPB90N06S4-04, IPB90N06S4L-04, IPB009N03LG, IPB011N04LG, IPB011N04NG, IPB015N04LG, IRF730, IPB016N06L3G, IPB017N06N3G, IPB019N06L3G, IPB019N08N3G, IPB020N04NG, IPB020NE7N3G, IPB021N06N3G, IPB022N04LG

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.