All MOSFET. IPB015N04NG Datasheet

 

IPB015N04NG MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPB015N04NG
   Marking Code: 015N04N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 188 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 4000 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
   Package: TO263

 IPB015N04NG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB015N04NG Datasheet (PDF)

 ..1. Size:673K  infineon
 ipp015n04ng ipb015n04ng.pdf

IPB015N04NG IPB015N04NG

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 4.1. Size:670K  infineon
 ipp015n04n ipb015n04n.pdf

IPB015N04NG IPB015N04NG

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 4.2. Size:670K  infineon
 ipp015n04n6 ipb015n04n6.pdf

IPB015N04NG IPB015N04NG

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 4.3. Size:257K  inchange semiconductor
 ipb015n04n.pdf

IPB015N04NG IPB015N04NG

Isc N-Channel MOSFET Transistor IPB015N04NFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: WMP07N65C4 | WMK90R360S | IXTH21N50 | HM100N20T | JANSR2N7399

 

 
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