IPB048N06LG MOSFET. Datasheet pdf. Equivalent
Type Designator: IPB048N06LG
Marking Code: 048N06L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
Maximum Drain Current |Id|: 100 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 169 nC
Rise Time (tr): 25 nS
Drain-Source Capacitance (Cd): 1500 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0044 Ohm
Package: TO263
IPB048N06LG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPB048N06LG Datasheet (PDF)
ipb048n06lg ipp048n06lg5.pdf
IPP048N06L G IPB048N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R 4 4 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C
ipb048n15n5.pdf
IPB048N15N5MOSFETDPAKOptiMOS5 Power-Transistor, 150 VFeaturestab Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application1 Ideal for high-frequency switching and
ipb048n15n5lf.pdf
IPB048N15N5LFMOSFETDPAKOptiMOSTM 5 Linear FET, 150 VFeatures Ideal for hot-swap and e-fuse applications Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21Drain
ipb048n15n5.pdf
IPB048N15N5MOSFETDPAKOptiMOS5 Power-Transistor, 150 VFeaturestab Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application1 Ideal for high-frequency switching and
ipb048n15n5lf.pdf
isc N-Channel MOSFET Transistor IPB048N15N5LFDESCRIPTIONDrain Current I = 120A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL ARAMETER
ipb048n15n5.pdf
Isc N-Channel MOSFET Transistor IPB048N15N5FEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF4905 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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