IPB048N06LG Specs and Replacement

Type Designator: IPB048N06LG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 1500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm

Package: TO263

IPB048N06LG substitution

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IPB048N06LG datasheet

 ..1. Size:734K  infineon
ipb048n06lg ipp048n06lg5.pdf pdf_icon

IPB048N06LG

IPP048N06L G IPB048N06L G Power-Transistor Product Summary Features V D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> R 4 4 m , ?> =1G ,' E5AB9?> P ( 381>>581>35=5>C ... See More ⇒

 7.1. Size:1005K  1
ipb048n15n5.pdf pdf_icon

IPB048N06LG

IPB048N15N5 MOSFET D PAK OptiMOS 5 Power-Transistor, 150 V Features tab Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application 1 Ideal for high-frequency switching and ... See More ⇒

 7.2. Size:899K  infineon
ipb048n15n5lf.pdf pdf_icon

IPB048N06LG

IPB048N15N5LF MOSFET D PAK OptiMOSTM 5 Linear FET, 150 V Features Ideal for hot-swap and e-fuse applications Very low on-resistance R DS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Drain ... See More ⇒

 7.3. Size:1005K  infineon
ipb048n15n5.pdf pdf_icon

IPB048N06LG

IPB048N15N5 MOSFET D PAK OptiMOS 5 Power-Transistor, 150 V Features tab Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application 1 Ideal for high-frequency switching and ... See More ⇒

Detailed specifications: IPB036N12N3G, IPB037N06N3G, IPB038N12N3G, IPB039N04LG, IPB039N10N3G, IPB041N04NG, IPB042N03LG, IPB042N10N3G, IRF9540, IPB049N06L3G, IPB049NE7N3G, IPB050N06NG, IPB051NE8NG, IPB052N04NG, IPB054N06N3G, IPB054N08N3G, IPB055N03LG

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.