All MOSFET. IPB065N06LG Datasheet

 

IPB065N06LG Datasheet and Replacement


   Type Designator: IPB065N06LG
   Marking Code: 065N06L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 118 nC
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 890 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: TO263
 

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IPB065N06LG Datasheet (PDF)

 ..1. Size:738K  infineon
ipb065n06lg ipp065n06lg.pdf pdf_icon

IPB065N06LG

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 6.1. Size:614K  infineon
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IPB065N06LG

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 6.2. Size:242K  inchange semiconductor
ipb065n03l.pdf pdf_icon

IPB065N06LG

isc N-Channel MOSFET Transistor IPB065N03LDESCRIPTIONDrain Current :I = 50A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)CSY

 7.1. Size:1157K  infineon
ipb065n10n3g.pdf pdf_icon

IPB065N06LG

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS3 Power-Transistor, 100 VIPB065N10N3 GData SheetRev. 2.0FinalPower Management & MultimarketOptiMOS3 Power-Transistor, 100 VIPB065N10N3 GDPAK1 DescriptionFeatures N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 175

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - IPB065N06LG MOSFET datasheet

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