IPB093N04LG Datasheet and Replacement
Type Designator: IPB093N04LG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 2.8 nS
Cossⓘ - Output Capacitance: 320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm
Package: TO263
IPB093N04LG substitution
IPB093N04LG Datasheet (PDF)
ipb093n04l.pdf

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ipp093n06n3 ipb093n06n3.pdf

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ipb09n03lag.pdf

IPB09N03LA GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 8.9mDS(on),max Qualified according to JEDEC1) for target applicationsI 50 AD N-channel - Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)PG-TO263-3-2 Superior thermal res
ipb090n06n3g ipp093n06n3g.pdf

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Datasheet: IPB072N15N3G , IPB075N04LG , IPB080N03LG , IPB080N06NG , IPB081N06L3G , IPB083N10N3G , IPB08CNE8NG , IPB090N06N3G , IRLB4132 , IPB096N03LG , IPB097N08N3G , IPB100N04S4-H2 , IPB107N20N3G , IPB108N15N3G , IPB114N03LG , IPB120N04S4-01 , IPB120N04S4-02 .
Keywords - IPB093N04LG MOSFET datasheet
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