IPB107N20N3G PDF and Equivalents Search

 

IPB107N20N3G Specs and Replacement

Type Designator: IPB107N20N3G

Marking Code: 107N20N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 88 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 65 nC

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 401 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm

Package: TO263

IPB107N20N3G substitution

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IPB107N20N3G datasheet

 ..1. Size:690K  infineon
 ipb107n20n3-g ipp110n20n3-g ipi110n20n3-g ipb107n20n3g ipp110n20n3g ipi110n20n3g.pdf pdf_icon

IPB107N20N3G

IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V N-channel, normal level RDS(on),max (TO263) 10.7 mW Excellent gate charge x R product (FOM) DS(on) ID 88 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target appl... See More ⇒

 3.1. Size:258K  inchange semiconductor
 ipb107n20n3.pdf pdf_icon

IPB107N20N3G

isc N-Channel MOSFET Transistor IPB107N20N3 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒

 4.1. Size:652K  infineon
 ipb107n20na ipp110n20na.pdf pdf_icon

IPB107N20N3G

IPB107N20NA IPP110N20NA OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V N-channel, normal level RDS(on),max (TO263) 10.7 mW Excellent gate charge x R product (FOM) DS(on) ID 88 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Halogen-free according to IE... See More ⇒

 4.2. Size:258K  inchange semiconductor
 ipb107n20na.pdf pdf_icon

IPB107N20N3G

Isc N-Channel MOSFET Transistor IPB107N20NA FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒

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Detailed specifications: IPB081N06L3G , IPB083N10N3G , IPB08CNE8NG , IPB090N06N3G , IPB093N04LG , IPB096N03LG , IPB097N08N3G , IPB100N04S4-H2 , IRFP450 , IPB108N15N3G , IPB114N03LG , IPB120N04S4-01 , IPB120N04S4-02 , IPB120N06NG , IPB120N06S4-02 , IPB120N06S4-H1 , IPB123N10N3G .

Keywords - IPB107N20N3G MOSFET specs

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