All MOSFET. IPB180N04S4-H0 Datasheet

 

IPB180N04S4-H0 Datasheet and Replacement


   Type Designator: IPB180N04S4-H0
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 3000 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm
   Package: TO263-7
 

 IPB180N04S4-H0 substitution

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IPB180N04S4-H0 Datasheet (PDF)

 ..1. Size:162K  infineon
ipb180n04s4-h0 ipb180n04s4-h0 ds 1 0.pdf pdf_icon

IPB180N04S4-H0

IPB180N04S4-H0OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.1mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-H0 PG-TO263-7-3 4N04H0

 2.1. Size:351K  infineon
ipb180n04s4-00.pdf pdf_icon

IPB180N04S4-H0

IPB180N04S4-00OptiMOS-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 0.98mWID 180 AFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-00 PG-TO263-7-3 4N0400Maxim

 2.2. Size:162K  infineon
ipb180n04s4-00 ds 1 0.pdf pdf_icon

IPB180N04S4-H0

IPB180N04S4-00OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 0.98mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-00 PG-TO263-7-3 4N040

 2.3. Size:162K  infineon
ipb180n04s4-01 ipb180n04s4-01 ds 1 0.pdf pdf_icon

IPB180N04S4-H0

IPB180N04S4-01OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.3mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-01 PG-TO263-7-3 4N0401

Datasheet: IPB12CNE8NG , IPB136N08N3G , IPB144N12N3G , IPB147N03LG , IPB160N04S4-H1 , IPB16CN10NG , IPB180N03S4L-01 , IPB180N04S4-01 , IRF2807 , IPB200N15N3G , IPB200N25N3G , IPB230N06L3G , IPB260N06N3G , IPB26CN10NG , IPB320N20N3G , IPB34CN10NG , IPB45N04S4L-08 .

Keywords - IPB180N04S4-H0 MOSFET datasheet

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