IPB180N04S4-H0 PDF and Equivalents Search

 

IPB180N04S4-H0 Specs and Replacement

Type Designator: IPB180N04S4-H0

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 3000 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm

Package: TO263-7

IPB180N04S4-H0 substitution

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IPB180N04S4-H0 datasheet

 ..1. Size:162K  infineon
 ipb180n04s4-h0 ipb180n04s4-h0 ds 1 0.pdf pdf_icon

IPB180N04S4-H0

IPB180N04S4-H0 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.1 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-H0 PG-TO263-7-3 4N04H0... See More ⇒

 2.1. Size:351K  infineon
 ipb180n04s4-00.pdf pdf_icon

IPB180N04S4-H0

IPB180N04S4-00 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on) 0.98 mW ID 180 A Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N0400 Maxim... See More ⇒

 2.2. Size:162K  infineon
 ipb180n04s4-00 ds 1 0.pdf pdf_icon

IPB180N04S4-H0

IPB180N04S4-00 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 0.98 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N040... See More ⇒

 2.3. Size:162K  infineon
 ipb180n04s4-01 ipb180n04s4-01 ds 1 0.pdf pdf_icon

IPB180N04S4-H0

IPB180N04S4-01 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.3 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-01 PG-TO263-7-3 4N0401... See More ⇒

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Detailed specifications: IPB12CNE8NG , IPB136N08N3G , IPB144N12N3G , IPB147N03LG , IPB160N04S4-H1 , IPB16CN10NG , IPB180N03S4L-01 , IPB180N04S4-01 , STF13NM60N , IPB200N15N3G , IPB200N25N3G , IPB230N06L3G , IPB260N06N3G , IPB26CN10NG , IPB320N20N3G , IPB34CN10NG , IPB45N04S4L-08 .

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