IPB200N25N3G MOSFET. Datasheet pdf. Equivalent

   Type Designator: IPB200N25N3G
   Marking Code: 200N25N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 64 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 64 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 297 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO263

IPB200N25N3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS