All MOSFET. IPB50R140CP Datasheet

 

IPB50R140CP Datasheet and Replacement


   Type Designator: IPB50R140CP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO263
 

 IPB50R140CP substitution

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IPB50R140CP Datasheet (PDF)

 ..1. Size:555K  infineon
 ipb50r140cp.pdf pdf_icon

IPB50R140CP

IPB50R140CPCIMOSTM #:A0

 ..2. Size:228K  inchange semiconductor
 ipb50r140cp.pdf pdf_icon

IPB50R140CP

Isc N-Channel MOSFET Transistor IPB50R140CPFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 7.1. Size:554K  infineon
 ipb50r199cp.pdf pdf_icon

IPB50R140CP

IPB50R199CPCIMOSTM #:A0

 7.2. Size:228K  inchange semiconductor
 ipb50r199cp.pdf pdf_icon

IPB50R140CP

Isc N-Channel MOSFET Transistor IPB50R199CPFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

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Datasheet: IPB200N25N3G , IPB230N06L3G , IPB260N06N3G , IPB26CN10NG , IPB320N20N3G , IPB34CN10NG , IPB45N04S4L-08 , IPB50CN10NG , MMIS60R580P , IPB50R199CP , IPB50R250CP , IPB50R299CP , IPB530N15N3G , IPB600N25N3G , IPB60R099C6 , IPB60R099CP , IPB60R099CPA .

History: FQI3N25TU | STL8P2UH7 | FDU2572 | PD6D2BA | CJS2013 | SED8830 | KUK128-50DL

Keywords - IPB50R140CP MOSFET datasheet

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