IPB50R140CP Specs and Replacement
Type Designator: IPB50R140CP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: TO263
IPB50R140CP substitution
- MOSFET ⓘ Cross-Reference Search
IPB50R140CP datasheet
ipb50r140cp.pdf
Isc N-Channel MOSFET Transistor IPB50R140CP FEATURES With TO-263( D PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
ipb50r199cp.pdf
Isc N-Channel MOSFET Transistor IPB50R199CP FEATURES With TO-263( D PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒
Detailed specifications: IPB200N25N3G, IPB230N06L3G, IPB260N06N3G, IPB26CN10NG, IPB320N20N3G, IPB34CN10NG, IPB45N04S4L-08, IPB50CN10NG, 7N60, IPB50R199CP, IPB50R250CP, IPB50R299CP, IPB530N15N3G, IPB600N25N3G, IPB60R099C6, IPB60R099CP, IPB60R099CPA
Keywords - IPB50R140CP MOSFET specs
IPB50R140CP cross reference
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