IPB50R140CP Specs and Replacement

Type Designator: IPB50R140CP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 192 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO263

IPB50R140CP substitution

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IPB50R140CP datasheet

 ..1. Size:555K  infineon
ipb50r140cp.pdf pdf_icon

IPB50R140CP

IPB50R140CP C IMOSTM # A0... See More ⇒

 ..2. Size:228K  inchange semiconductor
ipb50r140cp.pdf pdf_icon

IPB50R140CP

Isc N-Channel MOSFET Transistor IPB50R140CP FEATURES With TO-263( D PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

 7.1. Size:554K  infineon
ipb50r199cp.pdf pdf_icon

IPB50R140CP

IPB50R199CP C IMOSTM # A0... See More ⇒

 7.2. Size:228K  inchange semiconductor
ipb50r199cp.pdf pdf_icon

IPB50R140CP

Isc N-Channel MOSFET Transistor IPB50R199CP FEATURES With TO-263( D PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

Detailed specifications: IPB200N25N3G, IPB230N06L3G, IPB260N06N3G, IPB26CN10NG, IPB320N20N3G, IPB34CN10NG, IPB45N04S4L-08, IPB50CN10NG, 7N60, IPB50R199CP, IPB50R250CP, IPB50R299CP, IPB530N15N3G, IPB600N25N3G, IPB60R099C6, IPB60R099CP, IPB60R099CPA

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