IPB50R299CP MOSFET Datasheet: N-Ch, 500V, 12A. Full specification with pinout and replacement list

IPB50R299CP Specs and Replacement

Type Designator: IPB50R299CP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 53 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.299 Ohm

Package: TO263

IPB50R299CP substitution

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IPB50R299CP datasheet

..1. Size:559K infineon
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IPB50R299CP C IMOSTM # A0... See More ⇒

..2. Size:228K inchange semiconductor
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Isc N-Channel MOSFET Transistor IPB50R299CP FEATURES With TO-263( D PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

7.1. Size:552K infineon
ipb50r250cp.pdf pdf_icon

IPB50R250CP C IMOSTM # A0... See More ⇒

7.2. Size:228K inchange semiconductor
ipb50r250cp.pdf pdf_icon

Isc N-Channel MOSFET Transistor IPB50R250CP FEATURES With TO-263( D PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒