All MOSFET. IPB50R299CP Datasheet

 

IPB50R299CP Datasheet and Replacement


   Type Designator: IPB50R299CP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 53 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.299 Ohm
   Package: TO263
 

 IPB50R299CP substitution

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IPB50R299CP Datasheet (PDF)

 ..1. Size:559K  infineon
 ipb50r299cp.pdf pdf_icon

IPB50R299CP

IPB50R299CPCIMOSTM #:A0

 ..2. Size:228K  inchange semiconductor
 ipb50r299cp.pdf pdf_icon

IPB50R299CP

Isc N-Channel MOSFET Transistor IPB50R299CPFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 7.1. Size:552K  infineon
 ipb50r250cp.pdf pdf_icon

IPB50R299CP

IPB50R250CPCIMOSTM #:A0

 7.2. Size:228K  inchange semiconductor
 ipb50r250cp.pdf pdf_icon

IPB50R299CP

Isc N-Channel MOSFET Transistor IPB50R250CPFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

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Datasheet: IPB26CN10NG , IPB320N20N3G , IPB34CN10NG , IPB45N04S4L-08 , IPB50CN10NG , IPB50R140CP , IPB50R199CP , IPB50R250CP , IRF830 , IPB530N15N3G , IPB600N25N3G , IPB60R099C6 , IPB60R099CP , IPB60R099CPA , IPB60R125C6 , IPB60R125CP , IPB60R160C6 .

History: IPB081N06L3G | IXTH24N50Q | DH850N10B | CS8N60P | IPB60R120P7 | IPB065N06LG | DH850N10

Keywords - IPB50R299CP MOSFET datasheet

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