IPB60R099C6 Datasheet and Replacement
Type Designator: IPB60R099C6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 37.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 154 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TO263
IPB60R099C6 substitution
IPB60R099C6 Datasheet (PDF)
ipa60r099c6 ipb60r099c6 ipp60r099c6 ipw60r099c6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R099C6 Data SheetRev. 2.1, 2010-02-09Final Industrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R099C6, IPB60R099C6IPP60R099C6 IPW60R099C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the supe
ipb60r099c6.pdf

Isc N-Channel MOSFET Transistor IPB60R099C6FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
Datasheet: IPB45N04S4L-08 , IPB50CN10NG , IPB50R140CP , IPB50R199CP , IPB50R250CP , IPB50R299CP , IPB530N15N3G , IPB600N25N3G , 8N60 , IPB60R099CP , IPB60R099CPA , IPB60R125C6 , IPB60R125CP , IPB60R160C6 , IPB60R165CP , IPB60R190C6 , IPB60R199CP .
History: SIHF830AS | AM90N06-04M2B | SSM3K56CT | AUIRFP4227 | VBZE04N03 | IXTJ3N150 | UTC654
Keywords - IPB60R099C6 MOSFET datasheet
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History: SIHF830AS | AM90N06-04M2B | SSM3K56CT | AUIRFP4227 | VBZE04N03 | IXTJ3N150 | UTC654



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