IPB60R099C6 Specs and Replacement

Type Designator: IPB60R099C6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 278 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 37.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 154 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm

Package: TO263

IPB60R099C6 substitution

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IPB60R099C6 datasheet

 ..1. Size:1385K  infineon
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IPB60R099C6

MOSFET + =L9D - PA... See More ⇒

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IPB60R099C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the supe... See More ⇒

 ..3. Size:258K  inchange semiconductor
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IPB60R099C6

Isc N-Channel MOSFET Transistor IPB60R099C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒

 4.1. Size:588K  infineon
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IPB60R099C6

IPB60R099CP C IMOSTM # A0... See More ⇒

Detailed specifications: IPB45N04S4L-08, IPB50CN10NG, IPB50R140CP, IPB50R199CP, IPB50R250CP, IPB50R299CP, IPB530N15N3G, IPB600N25N3G, IRFB7545, IPB60R099CP, IPB60R099CPA, IPB60R125C6, IPB60R125CP, IPB60R160C6, IPB60R165CP, IPB60R190C6, IPB60R199CP

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.