All MOSFET. IPB60R099C6 Datasheet

 

IPB60R099C6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPB60R099C6
   Marking Code: 6R099C6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 37.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 119 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 154 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO263

 IPB60R099C6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPB60R099C6 Datasheet (PDF)

 ..1. Size:1385K  infineon
 ipb60r099c6.pdf

IPB60R099C6 IPB60R099C6

MOSFET+ =L9D - PA

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 ipa60r099c6 ipb60r099c6 ipp60r099c6 ipw60r099c6.pdf

IPB60R099C6 IPB60R099C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R099C6 Data SheetRev. 2.1, 2010-02-09Final Industrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R099C6, IPB60R099C6IPP60R099C6 IPW60R099C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the supe

 ..3. Size:258K  inchange semiconductor
 ipb60r099c6.pdf

IPB60R099C6 IPB60R099C6

Isc N-Channel MOSFET Transistor IPB60R099C6FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 4.1. Size:588K  infineon
 ipb60r099cp.pdf

IPB60R099C6 IPB60R099C6

IPB60R099CPCIMOSTM #:A0

 4.2. Size:421K  infineon
 ipb60r099cpa.pdf

IPB60R099C6 IPB60R099C6

IPB60R099CPACoolMOS Power TransistorProduct SummaryV 600 VDSR 0.105DS(on),maxQ 60 nCg,typFeatures Worldwide best Rds,on in TO263PG-TO263-3-2 Ultra low gate charge Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant)CoolMOS CPA is specially designed for: DC/DC converters for A

 4.3. Size:1204K  infineon
 ipb60r099c7.pdf

IPB60R099C6 IPB60R099C6

IPB60R099C7MOSFETDPAK600V CoolMOS C7 Power TransistorCoolMOS C7 is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.21The 600V C7 is the first technolo

 4.4. Size:258K  inchange semiconductor
 ipb60r099cp.pdf

IPB60R099C6 IPB60R099C6

Isc N-Channel MOSFET Transistor IPB60R099CPFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

 4.5. Size:258K  inchange semiconductor
 ipb60r099c7.pdf

IPB60R099C6 IPB60R099C6

Isc N-Channel MOSFET Transistor IPB60R099C7FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TMP9N60 | TMPF13N50A

 

 
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