IPB60R125C6 Datasheet and Replacement
Type Designator: IPB60R125C6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 219 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 125 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO263
IPB60R125C6 substitution
IPB60R125C6 Datasheet (PDF)
ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R125C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R125C6, IPB60R125C6IPP60R125C6 IPW60R125C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superj
ipb60r125c6.pdf

Isc N-Channel MOSFET Transistor IPB60R125C6FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
ipb60r125cp.pdf

IPB60R125CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tj,max 650 VDS Lowest figure-of-merit RONxQgR 0.125DS(on),max Ultra low gate chargeQ 53 nCg,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO263 Pb-free lead plating; RoHS compliantCoolMOS CP is specially designe
Datasheet: IPB50R199CP , IPB50R250CP , IPB50R299CP , IPB530N15N3G , IPB600N25N3G , IPB60R099C6 , IPB60R099CP , IPB60R099CPA , 2SK3918 , IPB60R125CP , IPB60R160C6 , IPB60R165CP , IPB60R190C6 , IPB60R199CP , IPB60R199CPA , IPB60R250CP , IPB60R280C6 .
History: HGD120N06SL | IRFSL3107PBF | AON6206
Keywords - IPB60R125C6 MOSFET datasheet
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History: HGD120N06SL | IRFSL3107PBF | AON6206



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