All MOSFET. IPB60R165CP Datasheet

 

IPB60R165CP Datasheet and Replacement


   Type Designator: IPB60R165CP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: TO263
 
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IPB60R165CP Datasheet (PDF)

 ..1. Size:348K  infineon
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IPB60R165CP

IPB60R165CPCoolMOS Power TransistorProduct SummaryFeaturesV @ Tj,max 650 VDS Lowest figure-of-merit RONxQgR 0.165DS(on),max Ultra low gate chargeQ 39 nCg,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO263 Pb-free lead plating; RoHS compliantCoolMOS CP is specially designed

 ..2. Size:227K  inchange semiconductor
ipb60r165cp.pdf pdf_icon

IPB60R165CP

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB60R165CPFEATURESWith TO-263(D2PAK) packagingUltra-fast body diodeHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stages, hard switching PWM stages and resonant sw

 6.1. Size:1019K  infineon
ipa60r160c6 ipb60r160c6 ipp60r160c6 ipw60r160c6.pdf pdf_icon

IPB60R165CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R160C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6IPP60R160C6 IPW60R160C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunct

 6.2. Size:1723K  infineon
ipb60r160c6.pdf pdf_icon

IPB60R165CP

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R160C6Data SheetRev. 2.1, 2010-02-09FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6IPP60R160C6 IPW60R160C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superj

Datasheet: IPB530N15N3G , IPB600N25N3G , IPB60R099C6 , IPB60R099CP , IPB60R099CPA , IPB60R125C6 , IPB60R125CP , IPB60R160C6 , HY1906P , IPB60R190C6 , IPB60R199CP , IPB60R199CPA , IPB60R250CP , IPB60R280C6 , IPB60R299CP , IPB60R299CPA , IPB60R380C6 .

History: FDMS7606

Keywords - IPB60R165CP MOSFET datasheet

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