2N6790JANTX Specs and Replacement
Type Designator: 2N6790JANTX
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO205AF
2N6790JANTX substitution
2N6790JANTX Specs
2n6790u.pdf
PD - 93984A REPETITIVE AVALANCHE AND dv/dt RATED IRFE220 HEXFET TRANSISTORS JANTX2N6790U SURFACE MOUNT (LCC-18) REF MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFE220 100V 0.80 2.8A LCC-18 The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface Features mount technology. Desinged t... See More ⇒
2n6790 irff220.pdf
PD - 90427C IRFF220 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6790 HEXFET TRANSISTORS JANTXV2N6790 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF220 200V 0.80 3.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processin... See More ⇒
2n6790.pdf
2N6790 Data Sheet December 2001 3.5A, 200V, 0.800 Ohm, N-Channel Power Features MOSFET 3.5A, 200V The 2N6790 is an N-Channel enhancement mode silicon rDS(ON) = 0.800 gate power MOS field effect transistor designed for SOA is Power Dissipation Limited applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high ... See More ⇒
Detailed specifications: 2N6788 , 2N6788JANTX , 2N6788JANTXV , 2N6788SM , 2N6789 , 2N6789LCC4 , 2N6789-SM , 2N6790 , IRF3710 , 2N6790JANTXV , 2N6791 , 2N6791LCC4 , 2N6791-SM , 2N6792 , 2N6792JANT , 2N6792JANTX , 2N6792JANTXV .
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