2N6790JANTX
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N6790JANTX
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 20
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 3.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 600
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8
Ohm
Package:
TO205AF
2N6790JANTX
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N6790JANTX
Datasheet (PDF)
8.1. Size:191K international rectifier
2n6790u.pdf 
PD - 93984AREPETITIVE AVALANCHE AND dv/dt RATED IRFE220HEXFETTRANSISTORS JANTX2N6790USURFACE MOUNT (LCC-18)REF:MIL-PRF-19500/555 200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFE220 100V 0.80 2.8ALCC-18The leadless chip carrier (LCC) package represents thelogical next step in the continual evolution of surfaceFeatures:mount technology. Desinged t
8.2. Size:133K international rectifier
2n6790 irff220.pdf
PD - 90427CIRFF220REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6790HEXFETTRANSISTORS JANTXV2N6790THRU-HOLE (TO-205AF) REF:MIL-PRF-19500/555200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFF220 200V 0.80 3.5AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processin
8.3. Size:86K fairchild semi
2n6790.pdf
2N6790Data Sheet December 20013.5A, 200V, 0.800 Ohm, N-Channel Power FeaturesMOSFET 3.5A, 200VThe 2N6790 is an N-Channel enhancement mode silicon rDS(ON) = 0.800gate power MOS field effect transistor designed for SOA is Power Dissipation Limitedapplications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high
Datasheet: 2N6788
, 2N6788JANTX
, 2N6788JANTXV
, 2N6788SM
, 2N6789
, 2N6789LCC4
, 2N6789-SM
, 2N6790
, IRFB4110
, 2N6790JANTXV
, 2N6791
, 2N6791LCC4
, 2N6791-SM
, 2N6792
, 2N6792JANT
, 2N6792JANTX
, 2N6792JANTXV
.
