IPB60R600C6 Specs and Replacement
Type Designator: IPB60R600C6
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO263
IPB60R600C6 substitution
- MOSFET ⓘ Cross-Reference Search
IPB60R600C6 datasheet
ipd60r600c6 ipb60r600c6 ipp60r600c6 ipa60r600c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R600C6 Data Sheet Rev. 2.5 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPD60R600C6, IPB60R600C6 IPP60R600C6, IPA60R600C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the super... See More ⇒
ipb60r600c6.pdf
Isc N-Channel MOSFET Transistor IPB60R600C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V... See More ⇒
ipb60r600cp.pdf
IPB60R600CP CoolMOSTM Power Transistor Product Summary Features V @ Tj,max 650 V DS Lowest figure-of-merit RON x Qg R @ Tj =25 C 0.6 DS(on),max Ultra low gate charge Q 21 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications PG-TO263 Pb-free lead plating; RoHS compliant CoolMOS CP is desi... See More ⇒
Detailed specifications: IPB60R199CPA, IPB60R250CP, IPB60R280C6, IPB60R299CP, IPB60R299CPA, IPB60R380C6, IPB60R385CP, IPB60R520CP, IRF540N, IPB60R600CP, IPB60R950C6, IPB65R280C6, IPB65R280E6, IPB65R380C6, IPB65R600C6, IPB65R660CFD, IPB70N04S4-06
Keywords - IPB60R600C6 MOSFET specs
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