IPD100N06S4-03 Specs and Replacement

Type Designator: IPD100N06S4-03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 1960 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: TO252

IPD100N06S4-03 substitution

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IPD100N06S4-03 datasheet

 ..1. Size:163K  infineon
 ipd100n06s4-03.pdf pdf_icon

IPD100N06S4-03

IPD100N06S4-03 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 3.5 m DS(on),max I 100 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSon Ultra High ID Type Package Marking IPD100N... See More ⇒

 6.1. Size:154K  infineon
 ipd100n04s4-02.pdf pdf_icon

IPD100N06S4-03

IPD100N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 2.0 m DS(on),max I 100 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD100N04S4-02 PG-TO252-3-313 4N0402 Maximum ratin... See More ⇒

 6.2. Size:232K  infineon
 ipd100n04s4l-02.pdf pdf_icon

IPD100N06S4-03

IPD100N04S4L-02 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on),max 1.9 mW ID 100 A Features OptiMOSTM - power MOSFET for automotive applications PG-TO252-3-313 N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Typ... See More ⇒

 6.3. Size:291K  inchange semiconductor
 ipd100n04s4-02.pdf pdf_icon

IPD100N06S4-03

isc N-Channel MOSFET Transistor IPD100N04S4-02 FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 40V(Min) DSS Static Drain-Source On-Resistance R 4m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAX... See More ⇒

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Detailed specifications: IPB65R280E6, IPB65R380C6, IPB65R600C6, IPB65R660CFD, IPB70N04S4-06, IPB79CN10NG, IPB80N04S4-03, IPD100N04S4-02, IRFB4227, IPD14N06S2-80, IPD15N06S2L-64, IPD22N08S2L-50, IPD25N06S2-40, IPD25N06S4L-30, IPD26N06S2L-35, IPD30N03S2L-07, IPD30N03S2L-10

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