All MOSFET. IPD30N06S2L-23 Datasheet

 

IPD30N06S2L-23 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPD30N06S2L-23
   Marking Code: 2N06L23
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 33 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO252

 IPD30N06S2L-23 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD30N06S2L-23 Datasheet (PDF)

 ..1. Size:148K  infineon
ipd30n06s2l-23.pdf

IPD30N06S2L-23
IPD30N06S2L-23

IPD30N06S2L-23OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 23mDS(on),max Automotive AEC Q101 qualifiedI 30 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package Markin

 2.1. Size:148K  infineon
ipd30n06s2l-13.pdf

IPD30N06S2L-23
IPD30N06S2L-23

IPD30N06S2L-13OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 13mDS(on),max Automotive AEC Q101 qualifiedI 30 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package Markin

 4.1. Size:149K  infineon
ipd30n06s2-15.pdf

IPD30N06S2L-23
IPD30N06S2L-23

IPD30N06S2-15OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 14.7mDS(on),max Automotive AEC Q101 qualifiedI 30 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD30N06

 4.2. Size:149K  infineon
ipd30n06s2-23.pdf

IPD30N06S2L-23
IPD30N06S2L-23

IPD30N06S2-23OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Enhancement modeR (SMD version) 23mDS(on),max Automotive AEC Q101 qualifiedI 30 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD30N06S2

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2SJ134

 

 
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