IPD50N04S3-08 Specs and Replacement

Type Designator: IPD50N04S3-08

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 540 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO252

IPD50N04S3-08 substitution

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IPD50N04S3-08 datasheet

 ..1. Size:184K  infineon
 ipd50n04s3-08 ipd50n04s3-08 ds 1 0.pdf pdf_icon

IPD50N04S3-08

IPD50N04S3-08 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 7.5 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S3-08 PG-TO252-3-11 3N0408 Max... See More ⇒

 2.1. Size:182K  infineon
 ipd50n04s3-09 ipd50n04s3-09 ds 1 1.pdf pdf_icon

IPD50N04S3-08

IPD50N04S3-09 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 9 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S3-09 PG-TO252-3-11 3N0409 Maxim... See More ⇒

 5.1. Size:153K  infineon
 ipd50n04s4l-08 ipd50n04s4l-08 ds 1 0.pdf pdf_icon

IPD50N04S3-08

IPD50N04S4L-08 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 7.3 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S4-08 PG-TO252-3-313 4N04L08 Maximum rating... See More ⇒

 5.2. Size:153K  infineon
 ipd50n04s4-10 ipd50n04s4-10 ds 1 0.pdf pdf_icon

IPD50N04S3-08

IPD50N04S4-10 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 9.3 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S4-10 PG-TO252-3-313 4N0410 Maximum ratings,... See More ⇒

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Detailed specifications: IPD30N08S2-22, IPD30N08S2L-21, IPD30N10S3L-34, IPD35N10S3L-26, IPD40N03S4L-08, IPD50N03S2-07, IPD50N03S2L-06, IPD50N03S4L-06, K4145, IPD50N04S3-09, IPD50N06S2-14, IPD50N06S2L-13, IPF105N03LG, IPD50N06S4-09, IPD50N06S4L-08, IPD50N06S4L-12, IPD50N10S3L-16

Keywords - IPD50N04S3-08 MOSFET specs

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