All MOSFET. IPD50N06S4L-12 Datasheet

 

IPD50N06S4L-12 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPD50N06S4L-12
   Marking Code: 4N06L12
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 540 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO252

 IPD50N06S4L-12 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD50N06S4L-12 Datasheet (PDF)

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