APT6035SVR MOSFET. Datasheet pdf. Equivalent

APT6035SVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

APT6035SVR Datasheet (PDF)

1.1. apt6035bvfrg apt6035svfrg.pdf Size:117K _update_mosfet

APT6035BVFR APT6035SVFR Ω 600V 18A 0.350Ω Ω Ω Ω BVFR POWER MOS V® FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SVFR

1.2. apt6035svr.pdf Size:65K _apt

APT6035SVR 600V 18A 0.350Ω POWER MOS V® D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

 3.1. apt6035bvfr.pdf Size:116K _apt

APT6035BVFR APT6035SVFR Ω 600V 18A 0.350Ω Ω Ω Ω BVFR POWER MOS V® FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SVFR

3.2. apt6035bn.pdf Size:49K _apt

D TO-247 G APT6035BN 600V 19.0A 0.35Ω S POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APT6035BN UNIT VDSS Drain-Source Voltage 600 Volts ID Continuous Drain Current @ TC = 25°C 19 Amps IDM Pulsed Drain Current 1 76 VGS Gate-Source Voltage ±30 Volts Total Power Dissi

 3.3. apt6035avr.pdf Size:62K _apt

APT6035AVR 600V 16A 0.350Ω POWER MOS V® TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower L

3.4. apt6035bvr.pdf Size:62K _apt

APT6035BVR 600V 18A 0.350Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

 3.5. apt6035.pdf Size:62K _apt

APT6035AVR 600V 16A 0.350Ω POWER MOS V® TO-3 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower L

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