All MOSFET. IPD70N04S3-07 Datasheet

 

IPD70N04S3-07 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD70N04S3-07

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 79 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 70 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.006 Ohm

Package: PGTO252

IPD70N04S3-07 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD70N04S3-07 Datasheet (PDF)

1.1. ipd70n04s3-07 ds 1 0.pdf Size:182K _infineon

IPD70N04S3-07
IPD70N04S3-07

IPD70N04S3-07 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R 6.0 m? DS(on),max I 82 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD70N04S3-07 PG-TO252-3-11 QN0407 Maximum ratings, at T =

3.1. ipd70n03s4l-04 ds 2 0.pdf Size:186K _infineon

IPD70N04S3-07
IPD70N04S3-07

IPD70N03S4L-04 OptiMOS®-T2 Power-Transistor Product Summary V 30 V DS R 4.3 m? DS(on),max I 70 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPD70N03S4L-04 PG-TO252-3-11 4N03L04

4.1. ipd70n10s3l-12 ds 1 1.pdf Size:176K _infineon

IPD70N04S3-07
IPD70N04S3-07

IPD70N10S3L-12 OptiMOS®-T Power-Transistor Product Summary V 100 V DS R 11.5 mW DS(on),max I 70 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD70N10S3L-12 PG-TO252-3-11 QN10L12 Maximum ratings, a

4.2. ipd70n10s3-12 ds 1 1.pdf Size:175K _infineon

IPD70N04S3-07
IPD70N04S3-07

IPD70N10S3-12 OptiMOS®-T Power-Transistor Product Summary V 100 V DS R 11.1 mW DS(on),max I 70 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD70N10S3-12 PG-TO252-3-11 QN1012 Maximum ratings, at T

Datasheet: IPD50N06S2L-13 , IPD50N06S2L-14 , IPD50N06S4-09 , IPD50N06S4L-08 , IPD50N06S4L-12 , IPD50N10S3L-16 , IPD50P03P4L-11 , IPD70N03S4L-04 , J112 , IPD70N10S3-12 , IPD70N10S3L-12 , IPD80N04S3-06 , IPD80P03P4L-07 , IPD90N03S4L-02 , IPD90N03S4L-03 , IPD90N04S3-04 , IPD90N04S3-H4 .

 


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