IPD70N04S3-07 Specs and Replacement

Type Designator: IPD70N04S3-07

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 610 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO252

IPD70N04S3-07 substitution

- MOSFET ⓘ Cross-Reference Search

 

IPD70N04S3-07 datasheet

 ..1. Size:182K  infineon
ipd70n04s3-07 ds 1 0.pdf pdf_icon

IPD70N04S3-07

IPD70N04S3-07 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 6.0 m DS(on),max I 82 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD70N04S3-07 PG-TO252-3-11 QN0407 Max... See More ⇒

 7.1. Size:186K  infineon
ipd70n03s4l-04.pdf pdf_icon

IPD70N04S3-07

IPD70N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 4.3 m DS(on),max I 70 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD70N03S4L-04... See More ⇒

 7.2. Size:186K  infineon
ipd70n03s4l-04 ds.pdf pdf_icon

IPD70N04S3-07

IPD70N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 4.3 m DS(on),max I 70 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD70N03S4L-04... See More ⇒

 8.1. Size:176K  infineon
ipd70n10s3l-12 ipd70n10s3l-12 ds 1 1.pdf pdf_icon

IPD70N04S3-07

IPD70N10S3L-12 OptiMOS -T Power-Transistor Product Summary V 100 V DS R 11.5 mW DS(on),max I 70 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD70N10S3L-12 PG-TO252-3-11 QN10L12 ... See More ⇒

Detailed specifications: IPD50N06S2L-13, IPF105N03LG, IPD50N06S4-09, IPD50N06S4L-08, IPD50N06S4L-12, IPD50N10S3L-16, IPD50P03P4L-11, IPD70N03S4L-04, AON7506, IPD70N10S3-12, IPD70N10S3L-12, IPD80N04S3-06, IPD80P03P4L-07, IPD90N03S4L-02, IPD90N03S4L-03, IPD90N04S3-04, IPD90N04S3-H4

Keywords - IPD70N04S3-07 MOSFET specs

 IPD70N04S3-07 cross reference

 IPD70N04S3-07 equivalent finder

 IPD70N04S3-07 pdf lookup

 IPD70N04S3-07 substitution

 IPD70N04S3-07 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs