All MOSFET. IPD90N04S3-04 Datasheet

 

IPD90N04S3-04 Datasheet and Replacement


   Type Designator: IPD90N04S3-04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: TO252
 

 IPD90N04S3-04 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IPD90N04S3-04 Datasheet (PDF)

 ..1. Size:184K  infineon
 ipd90n04s3-04 ds 1 0.pdf pdf_icon

IPD90N04S3-04

IPD90N04S3-04OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 3.6mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S3-04 PG-TO252-3-11 QN0404Max

 3.1. Size:162K  infineon
 ipd90n04s3-h4.pdf pdf_icon

IPD90N04S3-04

IPD90N04S3-H4OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 4.3mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S3-H4 PG-TO252-3-11 QN04H4Max

 5.1. Size:152K  infineon
 ipd90n04s4-03 ipd90n04s4-03 ds 1 0.pdf pdf_icon

IPD90N04S3-04

IPD90N04S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 3.2mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-03 PG-TO252-3-313 4N0403Maximum ratings,

 5.2. Size:154K  infineon
 ipd90n04s4-04 ipd90n04s4-04 ds 1 0.pdf pdf_icon

IPD90N04S3-04

IPD90N04S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 4.1mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N04S4-04 PG-TO252-3-313 4N0404Maximum ratings,

SHOW MORE

Datasheet: IPD70N03S4L-04 , IPD70N04S3-07 , IPD70N10S3-12 , IPD70N10S3L-12 , IPD80N04S3-06 , IPD80P03P4L-07 , IPD90N03S4L-02 , IPD90N03S4L-03 , STF13NM60N , IPD90N04S3-H4 , IPD90N04S4-04 , IPD90N04S4L-04 , IPD90N06S4-04 , IPD90N06S4-05 , IPD90N06S4-07 , IPD90N06S4L-03 , IPD90N06S4L-05 .

History: CEB6086 | AP60WN2K3H | CSD25302Q2

Keywords - IPD90N04S3-04 MOSFET datasheet

 IPD90N04S3-04 cross reference
 IPD90N04S3-04 equivalent finder
 IPD90N04S3-04 lookup
 IPD90N04S3-04 substitution
 IPD90N04S3-04 replacement

 

 
Back to Top

 


 
.