IPD90N06S4-05 Specs and Replacement

Type Designator: IPD90N06S4-05

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 1230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0051 Ohm

Package: TO252

IPD90N06S4-05 substitution

- MOSFET ⓘ Cross-Reference Search

 

IPD90N06S4-05 datasheet

 ..1. Size:163K  infineon
ipd90n06s4-05 ipd90n06s4-05 ds 10.pdf pdf_icon

IPD90N06S4-05

IPD90N06S4-05 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 5.1 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSon Type Package Marking IPD90N04S6-05 PG-TO252-3-11 ... See More ⇒

 2.1. Size:163K  infineon
ipd90n06s4-04 ipd90n06s4-04 ds 12.pdf pdf_icon

IPD90N06S4-05

IPD90N06S4-04 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 3.8 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N06S4-04 PG-TO252-3-11 4N0604 Maximum ratings, a... See More ⇒

 2.2. Size:163K  infineon
ipd90n06s4-07 ipd90n06s4-07 ds 10.pdf pdf_icon

IPD90N06S4-05

IPD90N06S4-07 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 6.9 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSon Type Package Marking IPD90N04S6-07 PG-TO252-3-11 ... See More ⇒

 4.1. Size:163K  infineon
ipd90n06s4l-03 ipd90n06s4l-03 ds 10.pdf pdf_icon

IPD90N06S4-05

IPD90N06S4L-03 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 3.5 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Type Package Marking IPD90N06S4L-03 P... See More ⇒

Detailed specifications: IPD80P03P4L-07, IPD90N03S4L-02, IPD90N03S4L-03, IPD90N04S3-04, IPD90N04S3-H4, IPD90N04S4-04, IPD90N04S4L-04, IPD90N06S4-04, RFP50N06, IPD90N06S4-07, IPD90N06S4L-03, IPD90N06S4L-05, IPD90N06S4L-06, IPD90P03P4-04, IPD90P03P4L-04, IPD031N03LG, IPD031N06L3G

Keywords - IPD90N06S4-05 MOSFET specs

 IPD90N06S4-05 cross reference

 IPD90N06S4-05 equivalent finder

 IPD90N06S4-05 pdf lookup

 IPD90N06S4-05 substitution

 IPD90N06S4-05 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs