All MOSFET. IPD90N06S4L-03 Datasheet

 

IPD90N06S4L-03 Datasheet and Replacement


   Type Designator: IPD90N06S4L-03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 2060 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO252
 

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IPD90N06S4L-03 Datasheet (PDF)

 ..1. Size:163K  infineon
ipd90n06s4l-03 ipd90n06s4l-03 ds 10.pdf pdf_icon

IPD90N06S4L-03

IPD90N06S4L-03OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 3.5mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-03 P

 1.1. Size:163K  infineon
ipd90n06s4l-05 ipd90n06s4l-05 ds 10.pdf pdf_icon

IPD90N06S4L-03

IPD90N06S4L-05OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 4.6mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-05 PG-TO252-3-1

 1.2. Size:163K  infineon
ipd90n06s4l-06 ipd90n06s4l-06 ds 10.pdf pdf_icon

IPD90N06S4L-03

IPD90N06S4L-06OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 6.3mDS(on),maxI 90 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSonType Package MarkingIPD90N06S4L-06 P

 4.1. Size:163K  infineon
ipd90n06s4-04 ipd90n06s4-04 ds 12.pdf pdf_icon

IPD90N06S4L-03

IPD90N06S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 3.8mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD90N06S4-04 PG-TO252-3-11 4N0604Maximum ratings, a

Datasheet: IPD90N03S4L-03 , IPD90N04S3-04 , IPD90N04S3-H4 , IPD90N04S4-04 , IPD90N04S4L-04 , IPD90N06S4-04 , IPD90N06S4-05 , IPD90N06S4-07 , 7N60 , IPD90N06S4L-05 , IPD90N06S4L-06 , IPD90P03P4-04 , IPD90P03P4L-04 , IPD031N03LG , IPD031N06L3G , IPD034N06N3G , IPD035N06L3G .

History: CTLM8110-M832D | HSS2306A

Keywords - IPD90N06S4L-03 MOSFET datasheet

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