IPD036N04LG
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD036N04LG
Marking Code: 036N04L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 94
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 90
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 59
nC
trⓘ - Rise Time: 5.4
nS
Cossⓘ -
Output Capacitance: 1000
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0036
Ohm
Package:
TO252
IPD036N04LG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD036N04LG
Datasheet (PDF)
..1. Size:153K infineon
ipd036n04lg.pdf 
TypeIPD036N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.6mDS(on),max Optimized technology for DC/DC convertersI 90 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 100% Av
..2. Size:2552K cn vbsemi
ipd036n04lg.pdf
IPD036N04LGwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMUM
4.1. Size:429K infineon
ipd036n04l.pdf
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4.2. Size:242K inchange semiconductor
ipd036n04l.pdf
isc N-Channel MOSFET Transistor IPD036N04L, IIPD036N04LFEATURESStatic drain-source on-resistance:RDS(on)3.6mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV
9.1. Size:423K infineon
ipd038n04n.pdf
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9.2. Size:400K infineon
ipd03n03lag.pdf
IPD03N03LA G IPS03N03LA GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD Version) 3.2mDS(on),max Qualified according to JEDEC1) for target applicationsI 90 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 175 C operating temperatu
9.3. Size:433K infineon
ipd034n06n3g.pdf
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9.4. Size:668K infineon
ipd031n03l.pdf
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9.5. Size:436K infineon
ipd034n06n3.pdf
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9.7. Size:445K infineon
ipd031n06l3.pdf
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9.8. Size:865K infineon
ipd033n06n.pdf
IPD033N06NMOSFETD-PAKOptiMOSTM Power-Transistor, 60 VFeatures Optimized for synchronous rectificationtab 100% avalanche tested Superior thermal resistance N-channel, normal level1 2 Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant3 Halogen-free according to IEC61249-2-21Table 1 Key Performance Paramete
9.9. Size:444K infineon
ipd035n06l3.pdf
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9.10. Size:671K infineon
ipd031n03lg ips031n03lg.pdf
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9.11. Size:243K inchange semiconductor
ipd038n06n3.pdf
isc N-Channel MOSFET Transistor IPD038N06N3,IIPD038N06N3FEATURESStatic drain-source on-resistance:RDS(on)3.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFor synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
9.12. Size:241K inchange semiconductor
ipd031n03l.pdf
isc N-Channel MOSFET Transistor IPD031N03L, IIPD031N03LFEATURESStatic drain-source on-resistance:RDS(on)3.1mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV
9.13. Size:243K inchange semiconductor
ipd034n06n3.pdf
isc N-Channel MOSFET Transistor IPD034N06N3IIPD034N06N3FEATURESStatic drain-source on-resistance:RDS(on)3.4mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag
9.14. Size:242K inchange semiconductor
ipd031n06l3.pdf
isc N-Channel MOSFET Transistor IPD031N06L3, IIPD031N06L3FEATURESStatic drain-source on-resistance:RDS(on)3.1mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 6
9.15. Size:242K inchange semiconductor
ipd033n06n.pdf
isc N-Channel MOSFET Transistor IPD033N06N, IIPD033N06NFEATURESStatic drain-source on-resistance:RDS(on)3.3mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOptimized for synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou
Datasheet: IRFP360LC
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