All MOSFET. IPD068P03L3G Datasheet

 

IPD068P03L3G MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPD068P03L3G
   Marking Code: 068P03L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 68 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 2090 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: TO252

 IPD068P03L3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD068P03L3G Datasheet (PDF)

 ..1. Size:678K  infineon
 ipd068p03l3g 20.pdf

IPD068P03L3G IPD068P03L3G

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 ..2. Size:557K  infineon
 ipd068p03l3g.pdf

IPD068P03L3G IPD068P03L3G

IPD068P03L3 GOptiMOSTM P3 Power-TransistorProduct Summary FeaturesVDS -30 V single P-Channel in DPAKRDS(on),max VGS = 10V 6.8 mW Qualified according JEDEC1) for target applicationsVGS = 4.5V 11.0 175 C operating temperatureID ID -70 A 100% Avalanche tested Pb-free; RoHS compliant, halogen free applications: power managementPG-TO252-3

 3.1. Size:247K  inchange semiconductor
 ipd068p03l3.pdf

IPD068P03L3G IPD068P03L3G

isc P-Channel MOSFET Transistor IPD068P03L3,IIPD068P03L3FEATURESStatic drain-source on-resistance:RDS(on)6.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION175C operating junction temperatureABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour

 8.1. Size:501K  infineon
 ipd068n10n3g.pdf

IPD068P03L3G IPD068P03L3G

IPD068N10N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max 6.8 mW Excellent gate charge x R product (FOM)DS(on)ID 90 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-freq

 8.2. Size:243K  inchange semiconductor
 ipd068n10n3.pdf

IPD068P03L3G IPD068P03L3G

isc N-Channel MOSFET Transistor IPD068N10N3,IIPD068N10N3FEATURESStatic drain-source on-resistance:RDS(on)6.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 10

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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