IPD075N03LG Specs and Replacement
Type Designator: IPD075N03LG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.6 nS
Cossⓘ - Output Capacitance: 580 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO252
IPD075N03LG substitution
- MOSFET ⓘ Cross-Reference Search
IPD075N03LG datasheet
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Detailed specifications: IPD042P03L3G, IPD048N06L3G, IPD050N03LG, IPD053N06N3G, IPD053N08N3G, IPD060N03LG, IPD068N10N3G, IPD068P03L3G, IRFB7545, IPD079N06L3G, IPD082N10N3G, IPD088N04LG, IPD088N06N3G, IPD090N03LG, IPD096N08N3G, IPD105N03LG, IPD105N04LG
Keywords - IPD075N03LG MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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