IPD082N10N3G
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD082N10N3G
Marking Code: 082N10N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 80
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 42
nC
trⓘ - Rise Time: 42
nS
Cossⓘ -
Output Capacitance: 523
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0082
Ohm
Package:
TO252
IPD082N10N3G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD082N10N3G
Datasheet (PDF)
..1. Size:778K infineon
ipp086n10n3g ipi086n10n3g ipb083n10n3g ipd082n10n3g.pdf 
IPP086N10N3 G IPI086N10N3 GIPB083N10N3 G IPD082N10N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM)DS(on)ID 80 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED
3.1. Size:757K infineon
ipp086n10n3-g ipi086n10n3-g ipb083n10n3-g ipd082n10n3-g.pdf
IPP086N10N3 G IPI086N10N3 GIPB083N10N3 G IPD082N10N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM)DS(on)ID 80 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED
3.2. Size:242K inchange semiconductor
ipd082n10n3.pdf
isc N-Channel MOSFET Transistor IPD082N10N3,IIPD082N10N3FEATURESStatic drain-source on-resistance:RDS(on)8.2mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
9.2. Size:429K infineon
ipd088n04l.pdf
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9.3. Size:210K inchange semiconductor
ipd088n06n3g.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPD088N06N3GFEATURESWith TO-252(DPAK) packagingWith low gate drive requirementsVery high commutation ruggedness100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLCD&PDP TVPC silverboxUPS and solarABSOLUTE
9.4. Size:243K inchange semiconductor
ipd088n06n3.pdf
isc N-Channel MOSFET Transistor IPD088N06N3,IIPD088N06N3FEATURESStatic drain-source on-resistance:RDS(on)8.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60
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