All MOSFET. APT6045SVR Datasheet

 

APT6045SVR MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT6045SVR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 115 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 305 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: D3PAK

 APT6045SVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT6045SVR Datasheet (PDF)

 ..1. Size:65K  apt
 apt6045svr.pdf

APT6045SVR APT6045SVR

APT6045SVR600V 15A 0.450POWER MOS VD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

 5.1. Size:132K  microsemi
 apt6045bvfrg apt6045svfrg.pdf

APT6045SVR APT6045SVR

APT6045BVFR APT6045SVFR APT6045BVFRG APT6045SVFRG 600V 15A 0.45 *G Denotes RoHS Compliant, Pb Free Terminal Finish. BVFR POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhance-D3PAKment mode power MOSFETs. This new technology minimizes the JFET ef-fect, increases packing density and reduces the on-resistance. Power MOS V also achieves

 7.1. Size:63K  apt
 apt6045bvr.pdf

APT6045SVR APT6045SVR

APT6045BVR600V 15A 0.450POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 7.2. Size:56K  apt
 apt6045bn.pdf

APT6045SVR APT6045SVR

DTO-247GAPT6040BN 600V 18.0A 0.40SAPT6045BN 600V 17.0A 0.45POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 6040BN 6045BN UNITVDSS Drain-Source Voltage600 600 VoltsID Continuous Drain Current @ TC = 25C18 17AmpsIDM Pulsed Drain Current 172 68V

 7.3. Size:61K  apt
 apt6045cvr.pdf

APT6045SVR APT6045SVR

APT6045CVR600V 11.8A 0.450POWER MOS VTO-254TO-254Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested

 7.4. Size:376K  inchange semiconductor
 apt6045bvr.pdf

APT6045SVR APT6045SVR

isc N-Channel MOSFET Transistor APT6045BVRFEATURESDrain Current I =15A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.45(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Datasheet: APT6035AVR , APT6035BN , APT6035BVR , APT6035SVR , APT6037HVR , APT6040BN , APT6045BVR , APT6045CVR , IPSA70R360P7S , APT60M75JVR , APT60M75PVR , APT60M90JN , APT8015JVFR , APT8015JVR , APT8018JN , APT8028JVR , APT802R4KN .

 

 
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