IPD135N03LG Specs and Replacement
Type Designator: IPD135N03LG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 350 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: TO252
IPD135N03LG substitution
- MOSFET ⓘ Cross-Reference Search
IPD135N03LG datasheet
ipd135n03lg.pdf
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ipd135n03lg ipf135n03lg ips135n03lg ipu135n03lg.pdf
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ipd135n03l ipf135n03l ips135n03l ipu135n03l.pdf
Type IPD135N03L G IPF135N03L G IPS135N03L G IPU135N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 13.5 m DS(on),max Optimized technology for DC/DC converters I 30 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very ... See More ⇒
ipd135n03l.pdf
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Detailed specifications: IPD090N03LG, IPD096N08N3G, IPD105N03LG, IPD105N04LG, IPD110N12N3G, IPD122N10N3G, IPD127N06LG, IPD12CN10NG, IRF3205, IPD135N08N3G, IPD144N06NG, IPD160N04LG, IPD16CN10NG, IPD170N04NG, IPD180N10N3G, IPD200N15N3G, IPD220N06L3G
Keywords - IPD135N03LG MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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