All MOSFET. IPD135N03LG Datasheet

 

IPD135N03LG MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPD135N03LG
   Marking Code: 135N03L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 4.8 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: TO252

 IPD135N03LG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD135N03LG Datasheet (PDF)

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 ipd135n03lg.pdf

IPD135N03LG IPD135N03LG

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 4.1. Size:537K  infineon
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IPD135N03LG IPD135N03LG

Type IPD135N03L G IPF135N03L GIPS135N03L G IPU135N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 13.5mDS(on),max Optimized technology for DC/DC convertersI 30 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very

 4.2. Size:1393K  infineon
 ipd135n03l.pdf

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 4.3. Size:241K  inchange semiconductor
 ipd135n03l.pdf

IPD135N03LG IPD135N03LG

isc N-Channel MOSFET Transistor IPD135N03L, IIPD135N03LFEATURESStatic drain-source on-resistance:RDS(on)13.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRF4104SPBF | IRF9530-220M | APT20M38SVR

 

 
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