IPD135N03LG Specs and Replacement

Type Designator: IPD135N03LG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm

Package: TO252

IPD135N03LG substitution

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IPD135N03LG datasheet

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IPD135N03LG

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IPD135N03LG

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 4.1. Size:537K  infineon
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IPD135N03LG

Type IPD135N03L G IPF135N03L G IPS135N03L G IPU135N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 13.5 m DS(on),max Optimized technology for DC/DC converters I 30 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very ... See More ⇒

 4.2. Size:1393K  infineon
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IPD135N03LG

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Detailed specifications: IPD090N03LG, IPD096N08N3G, IPD105N03LG, IPD105N04LG, IPD110N12N3G, IPD122N10N3G, IPD127N06LG, IPD12CN10NG, IRF3205, IPD135N08N3G, IPD144N06NG, IPD160N04LG, IPD16CN10NG, IPD170N04NG, IPD180N10N3G, IPD200N15N3G, IPD220N06L3G

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs