IPD135N08N3G Specs and Replacement
Type Designator: IPD135N08N3G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 79 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 353 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
Package: TO252
IPD135N08N3G substitution
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IPD135N08N3G datasheet
ipd135n08n3g.pdf
IPD135N08N3 G OptiMOS(TM)3 Power-Transistor Product Summary Features VDS 80 V Ideal for high frequency switching RDS(on),max 13.5 mW Optimized technology for DC/DC converters ID 45 A Excellent gate charge x R product (FOM) DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target... See More ⇒
ipd135n08n3.pdf
isc N-Channel MOSFET Transistor IPD135N08N3,IIPD135N08N3 FEATURES Static drain-source on-resistance RDS(on) 13.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 8... See More ⇒
ipd135n03l ipf135n03l ips135n03l ipu135n03l.pdf
Type IPD135N03L G IPF135N03L G IPS135N03L G IPU135N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 13.5 m DS(on),max Optimized technology for DC/DC converters I 30 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very ... See More ⇒
Detailed specifications: IPD096N08N3G, IPD105N03LG, IPD105N04LG, IPD110N12N3G, IPD122N10N3G, IPD127N06LG, IPD12CN10NG, IPD135N03LG, IRF740, IPD144N06NG, IPD160N04LG, IPD16CN10NG, IPD170N04NG, IPD180N10N3G, IPD200N15N3G, IPD220N06L3G, IPD230N06LG
Keywords - IPD135N08N3G MOSFET specs
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