IPD160N04LG PDF and Equivalents Search

 4.1. Size:428K  infineon
 ipd160n04l.pdf

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 9.1. Size:661K  infineon
 ipb16cn10n ipd16cn10n ipi16cn10n ipp16cn10n.pdf

www.DataSheet4U.com IPB16CN10N G IPD16CN10N G IPI16CN10N G IPP16CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 16 m DS(on),max (TO252) Excellent gate charge x R product (FOM) DS(on) I 53 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified... See More ⇒

 9.2. Size:906K  infineon
 ipb16cn10ng ipd16cn10ng ipi16cn10ng ipp16cn10ng.pdf

$ " " $ " " $ " " $$ " " $;B1= '=- >5>?;= $=;0@/? &@99-=D 1 Features D 1 m S ) 5 3@@7> @AD?3> >7H7> . A@ ?3J /* S !J57>>7@F 93F7 5 3D97 J BDA6G5F "* ( D D n) S 07DK >AI A@ D7E;EF3@57 D n) S V AB7D3F;@9 F7?B7D3FGD7 S +4 8D77 >736 B>3F;@9 - A$. 5A?B>;3@F 1) S , G3>;8;76 355AD6;@9 FA &! ! 8AD F3D97F 3BB>;53F;A@ S %673> 8AD ;9 8D7CG7@5K EI;F5 ;@9 3@6 EK@5 DA@AGE D7... See More ⇒

 9.3. Size:242K  inchange semiconductor
 ipd16cn10n.pdf

isc N-Channel MOSFET Transistor IPD16CN10N,IIPD16CN10N FEATURES Static drain-source on-resistance RDS(on) 16m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒