IPD33CN10NG Datasheet and Replacement. Cross Reference Search

IPD33CN10NG Datasheet (PDF)

..1. Size:854K infineon
ipb34cn10ng ipd33cn10ng ipi35cn10ng ipp35cn10ng ipb34cn10n ipd33cn10n ipi35cn10n ipp35cn10n.pdf pdf_icon

IPB34CN10N G IPD33CN10N GIPI35CN10N G IPP35CN10N GOptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 33 mW Excellent gate charge x R product (FOM)DS(on)ID 27 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) f

4.1. Size:704K infineon
ipb35cn10n-g ipd33cn10n-g ipi35cn10n-g ipp35cn10n-g ipu33cn10n-g.pdf pdf_icon

IPB35CN10N G IPD33CN10N GIPI35CN10N G IPP35CN10N G IPU33CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 34mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 27 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

4.2. Size:243K inchange semiconductor
ipd33cn10n.pdf pdf_icon

isc N-Channel MOSFET Transistor IPD33CN10N,IIPD33CN10NFEATURESStatic drain-source on-resistance:RDS(on)34mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Datasheet: IPD180N10N3G , IPD200N15N3G , IPD220N06L3G , IPD230N06LG , IPD230N06NG , IPD250N06N3G , IPD25CN10NG , IPD320N20N3G , 10N60 , IPD350N06LG , IPD400N06NG , IPD49CN10NG , IPD50N04S4-08 , IPD50N04S4-10 , IPD50N04S4L-08 , IPD50P04P4L-11 , IPD50R399CP .