All MOSFET. IPD350N06LG Datasheet

 

IPD350N06LG MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPD350N06LG
   Marking Code: 350N06L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 29 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO252

 IPD350N06LG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD350N06LG Datasheet (PDF)

 ..1. Size:1008K  infineon
 ipd350n06lg.pdf

IPD350N06LG IPD350N06LG

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 4.1. Size:242K  inchange semiconductor
 ipd350n06l.pdf

IPD350N06LG IPD350N06LG

isc N-Channel MOSFET Transistor IPD350N06L,IIPD350N06LFEATURESStatic drain-source on-resistance:RDS(on)35mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV Ga

 9.1. Size:177K  infineon
 ipd35n10s3l-26 ipd35n10s3l-26 ds 1 1.pdf

IPD350N06LG IPD350N06LG

IPD35N10S3L-26OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR 26mWDS(on),maxI 35 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD35N10S3L-26 PG-TO252-3-11 3N10L26Ma

 9.2. Size:392K  infineon
 ipd35n12s3l-24.pdf

IPD350N06LG IPD350N06LG

IPD35N12S3L-24OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max 24 mW ID 35 A Features OptiMOS - power MOSFET for automotive applicationsPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedTyp

 9.3. Size:311K  inchange semiconductor
 ipd35n10s3l-26.pdf

IPD350N06LG IPD350N06LG

isc N-Channel MOSFET Transistor IPD35N10S3L-26FEATURESDrain Current I = 35A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MA

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IPD50N04S3-08 | IRF3205PBF | STF12NM50ND

 

 
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