All MOSFET. IPD50N04S4-10 Datasheet

 

IPD50N04S4-10 Datasheet and Replacement


   Type Designator: IPD50N04S4-10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm
   Package: TO252
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IPD50N04S4-10 Datasheet (PDF)

 ..1. Size:153K  infineon
 ipd50n04s4-10 ipd50n04s4-10 ds 1 0.pdf pdf_icon

IPD50N04S4-10

IPD50N04S4-10OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 9.3mDS(on),maxI 50 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N04S4-10 PG-TO252-3-313 4N0410Maximum ratings,

 3.1. Size:154K  infineon
 ipd50n04s4-08 ds 1 0.pdf pdf_icon

IPD50N04S4-10

IPD50N04S4-08OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 7.9mDS(on),maxI 50 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N04S4-08 PG-TO252-3-313 4N0408Maximum ratings,

 4.1. Size:153K  infineon
 ipd50n04s4l-08 ipd50n04s4l-08 ds 1 0.pdf pdf_icon

IPD50N04S4-10

IPD50N04S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 7.3mDS(on),maxI 50 ADFeatures N-channel - Enhancement modePG-TO252-3-313 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N04S4-08 PG-TO252-3-313 4N04L08Maximum rating

 5.1. Size:184K  infineon
 ipd50n04s3-08 ipd50n04s3-08 ds 1 0.pdf pdf_icon

IPD50N04S4-10

IPD50N04S3-08OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 7.5mDS(on),maxI 50 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD50N04S3-08 PG-TO252-3-11 3N0408Max

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Keywords - IPD50N04S4-10 MOSFET datasheet

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