IPD50N04S4-10 Specs and Replacement

Type Designator: IPD50N04S4-10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm

Package: TO252

IPD50N04S4-10 substitution

- MOSFET ⓘ Cross-Reference Search

 

IPD50N04S4-10 datasheet

 ..1. Size:153K  infineon
 ipd50n04s4-10 ipd50n04s4-10 ds 1 0.pdf pdf_icon

IPD50N04S4-10

IPD50N04S4-10 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 9.3 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S4-10 PG-TO252-3-313 4N0410 Maximum ratings,... See More ⇒

 3.1. Size:154K  infineon
 ipd50n04s4-08 ds 1 0.pdf pdf_icon

IPD50N04S4-10

IPD50N04S4-08 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 7.9 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S4-08 PG-TO252-3-313 4N0408 Maximum ratings,... See More ⇒

 4.1. Size:153K  infineon
 ipd50n04s4l-08 ipd50n04s4l-08 ds 1 0.pdf pdf_icon

IPD50N04S4-10

IPD50N04S4L-08 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 7.3 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S4-08 PG-TO252-3-313 4N04L08 Maximum rating... See More ⇒

 5.1. Size:184K  infineon
 ipd50n04s3-08 ipd50n04s3-08 ds 1 0.pdf pdf_icon

IPD50N04S4-10

IPD50N04S3-08 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 7.5 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S3-08 PG-TO252-3-11 3N0408 Max... See More ⇒

SHOW MORE

Detailed specifications: IPD250N06N3G, IPD25CN10NG, IPD320N20N3G, IPD33CN10NG, IPD350N06LG, IPD400N06NG, IPD49CN10NG, IPD50N04S4-08, AON6414A, IPD50N04S4L-08, IPD50P04P4L-11, IPD50R399CP, IPD50R520CP, IPD530N15N3G, IPD600N25N3G, IPD60R1K4C6, IPD60R2K0C6

Keywords - IPD50N04S4-10 MOSFET specs

 IPD50N04S4-10 cross reference

 IPD50N04S4-10 equivalent finder

 IPD50N04S4-10 pdf lookup

 IPD50N04S4-10 substitution

 IPD50N04S4-10 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.