All MOSFET. IPD50P04P4L-11 Datasheet

 

IPD50P04P4L-11 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD50P04P4L-11

Marking Code: 4P04L11

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 58 W

Maximum Drain-Source Voltage |Vds|: 40 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.2 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 45 nC

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 1100 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0106 Ohm

Package: TO252

IPD50P04P4L-11 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD50P04P4L-11 Datasheet (PDF)

0.1. ipd50p04p4l-11-datasheet-infineon-v10.pdf Size:114K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

IPD50P04P4L-11 OptiMOS®-P2 Power-Transistor Product Summary V -40 V DS R 10.6 mW DS(on),max I -50 A D Features PG-TO252-3-313 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Intended for reverse battery protection Type Package M

7.1. ipd50p03p4l-11 ds 11.pdf Size:159K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

IPD50P03P4L-11 OptiMOS®-P2 Power-Transistor Product Summary V -30 V DS R 10.5 mΩ DS(on),max I -50 A D Features PG-TO252-3-11 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Intended for reverse battery protection Type Package

 9.1. ipd50n06s2l-13.pdf Size:154K _1

IPD50P04P4L-11
IPD50P04P4L-11

IPD50N06S2L-13 OptiMOS® Power-Transistor Product Summary Features V 55 V DS • N-channel Logic Level - Enhancement mode R (SMD version) 12.7 mΩ DS(on),max • Automotive AEC Q101 qualified I 50 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Mark

9.2. ipd50r2k0ce ipu50r2k0ce.pdf Size:2508K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 500V CoolMOS™ CE Power Transistor IPx50R2K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS™ CE Power Transistor IPD50R2K0CE, IPU50R2K0CE DPAK IPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

 9.3. ipd50n03s4l-06 ds 1 1.pdf Size:132K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

IPD50N03S4L-06 OptiMOS®-T2 Power-Transistor Product Summary V 30 V DS R 5.5 mW DS(on),max I 50 A D PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N03S4L-06 PG-TO252-3-11 4N03L06 Maximum rat

9.4. ipd50r380ce.pdf Size:1840K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 500V CoolMOS™ CE Power Transistor IPD50R380CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS™ CE Power Transistor IPD50R380CE DPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and p

 9.5. ipd50n03s2l-06.pdf Size:151K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

IPD50N03S2L-06 OptiMOS® Power-Transistor Product Summary Features V 30 V DS • N-channel Logic Level - Enhancement mode R 6.4 mΩ DS(on),max • Automotive AEC Q101 qualified I 50 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPD50N03S2

9.6. ipd50n04s4-08 ds 1 0.pdf Size:154K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

IPD50N04S4-08 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 7.9 mΩ DS(on),max I 50 A D Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N04S4-08 PG-TO252-3-313 4N0408 Maximum ratings,

9.7. ipd50r280ce.pdf Size:1044K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 500V CoolMOS™ CE Power Transistor IPD50R280CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS™ CE Power Transistor IPD50R280CE DPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by

9.8. ipd50n04s3-09 ds 1 1.pdf Size:182K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

IPD50N04S3-09 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R 9 mΩ DS(on),max I 50 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N04S3-09 PG-TO252-3-11 3N0409 Maxim

9.9. ipd50r1k4ce ipu50r1k4ce.pdf Size:2492K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 500V CoolMOS™ CE Power Transistor IPx50R1K4CE Data Sheet Rev. 2.2 Final Power Management & Multimarket 500V CoolMOS™ CE Power Transistor IPD50R1K4CE, IPU50R1K4CE DPAK IPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

9.10. ipd50r650ce.pdf Size:1057K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 500V CoolMOS™ CE Power Transistor IPD50R650CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS™ CE Power Transistor IPD50R650CE DPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by

9.11. ipd50n04s3-08 ds 1 0.pdf Size:184K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

IPD50N04S3-08 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R 7.5 mΩ DS(on),max I 50 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N04S3-08 PG-TO252-3-11 3N0408 Max

9.12. ipd50r950ce ipu50r950ce.pdf Size:2499K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 500V CoolMOS™ CE Power Transistor IPx50R950CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS™ CE Power Transistor IPD50R950CE, IPU50R950CE DPAK IPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

9.13. ipd50n06s4l-08 ds 10.pdf Size:162K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

IPD50N06S4L-08 OptiMOS®-T2 Power-Transistor Product Summary V 60 V DS R 7.8 mΩ DS(on),max I 50 A D Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N06S4L-08 PG-TO252-3-11 4N06L08 Maximum ra

9.14. ipd50n06s2-14 ds 1 1.pdf Size:149K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

IPD50N06S2-14 ® Power-Transistor Product Summary Features V 55 V DS • N-channel - Enhancement mode R (SMD version) 14.4 mΩ DS(on),max • Automotive AEC Q101 qualified I 50 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPD50N06S2-14

9.15. ipd50n06s4l-12 ds 10.pdf Size:163K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

IPD50N06S4L-12 OptiMOS®-T2 Power-Transistor Product Summary V 60 V DS R 12 mΩ DS(on),max I 50 A D Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N06S4L-12 PG-TO252-3-11 4N06L12 Maximum rat

9.16. ipd50r399cp rev2 1b.pdf Size:658K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

IPD50R399CP CoolMOSTM Power Transistor Product Summary Product Summary Features V"1 @Tjmax 550 V V"1 @Tjmax 550 V V *EL;HI 7G=; Qg typ 17 nC Qg typ 17 nC V #MIG;C; :K :I G7I;: V &?=> F;7A 9JGG;DI 97F78?B?IN V .8 9.17. ipd50r500ce.pdf Size:1046K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 500V CoolMOS™ CE Power Transistor IPD50R500CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS™ CE Power Transistor IPD50R500CE DPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by

9.18. ipd50r800ce.pdf Size:1057K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 500V CoolMOS™ CE Power Transistor IPD50R800CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS™ CE Power Transistor IPD50R800CE DPAK 1 Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by

9.19. ipd50n04s4-10 ds 1 0.pdf Size:153K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

IPD50N04S4-10 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 9.3 mΩ DS(on),max I 50 A D Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N04S4-10 PG-TO252-3-313 4N0410 Maximum ratings,

9.20. ipd50r520cp.pdf Size:702K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

Type IPD50R520CP CoolMOSTM Power Transistor Product Summary Product Summary Package V"1 @Tjmax 550 V V"1 @Tjmax 550 V V *EL;HI 7G=; Qg typ 1 nC Qg typ 1 nC V #MIG;C; :K :I G7I;: V &?=> F;7A 9JGG;DI 97F78?B?IN V .8 9.21. ipd50n04s4l-08 ds 1 0.pdf Size:153K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

IPD50N04S4L-08 OptiMOS®-T2 Power-Transistor Product Summary V 40 V DS R 7.3 mΩ DS(on),max I 50 A D Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N04S4-08 PG-TO252-3-313 4N04L08 Maximum rating

9.22. ipd50n03s2-07.pdf Size:150K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

IPD50N03S2-07 OptiMOS® Power-Transistor Product Summary Features V 30 V DS • N-channel - Enhancement mode R 7.3 mΩ DS(on),max • Automotive AEC Q101 qualified I 50 A D • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11 • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPD50N03S2-07 PG-TO252-

9.23. ipd50n06s4-09 ds 12.pdf Size:164K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

IPD50N06S4-09 OptiMOS®-T2 Power-Transistor Product Summary V 60 V DS R 9.0 mΩ DS(on),max I 50 A D Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N06S4-09 PG-TO252-3-11 4N0609 Maximum ratings, a

9.24. ipd50n10s3l-16 ds 1 2.pdf Size:177K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

IPD50N10S3L-16 OptiMOS®-T Power-Transistor Product Summary V 100 V DS R 15 mW DS(on),max I 50 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD50N10S3L-16 PG-TO252-3-11 QN10L16 Ma

9.25. ipd50r3k0ce ipu50r3k0ce.pdf Size:2513K _infineon

IPD50P04P4L-11
IPD50P04P4L-11

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 500V CoolMOS™ CE Power Transistor IPx50R3K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS™ CE Power Transistor IPD50R3K0CE, IPU50R3K0CE DPAK IPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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