IPD60R1K4C6
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD60R1K4C6
Marking Code: 6R1K4C6
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 28.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 3.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9.4
nC
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 16
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4
Ohm
Package:
TO252
IPD60R1K4C6
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD60R1K4C6
Datasheet (PDF)
..2. Size:1304K infineon
ipd60r1k4c6.pdf 
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPD60 1K4C6 Data Sheet ev. 2.0 20100719Final Industrial & Multimarket600V CIMOS C6 Pwer Transistr IPD60R1K4C61 DescriptinCoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superjunction (S ) principle and pioneer
..3. Size:242K inchange semiconductor
ipd60r1k4c6.pdf
isc N-Channel MOSFET Transistor IPD60R1K4C6,IIPD60R1K4C6FEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV
6.1. Size:2314K infineon
ipd60r1k0ce ipu60r1k0ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R1K0CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R1K0CE, IPU60R1K0CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio
6.2. Size:2307K infineon
ipd60r1k5ce ipu60r1k5ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R1K5CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R1K5CE, IPU60R1K5CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio
6.3. Size:917K infineon
ipd60r1k0pfd7s.pdf
IPD60R1K0PFD7SMOSFETDPAK600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d
6.4. Size:602K infineon
ipd60r1k5pfd7s.pdf
IPD60R1K5PFD7SMOSFETDPAK600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d
6.5. Size:242K inchange semiconductor
ipd60r1k5ce.pdf
isc N-Channel MOSFET Transistor IPD60R1K5CE,IIPD60R1K5CEFEATURESStatic drain-source on-resistance:RDS(on)1.5Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV
6.6. Size:242K inchange semiconductor
ipd60r1k0ce.pdf
isc N-Channel MOSFET Transistor IPD60R1K0CE,IIPD60R1K0CEFEATURESStatic drain-source on-resistance:RDS(on)1Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV G
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