All MOSFET. IPD60R1K4C6 Datasheet

 

IPD60R1K4C6 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD60R1K4C6

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 28.4 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 3.2 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: DPAK, TO252

IPD60R1K4C6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD60R1K4C6 Datasheet (PDF)

1.1. ipd60r1k4c6 2.0.pdf Size:1322K _infineon

IPD60R1K4C6
IPD60R1K4C6

MOSFET + )>.;?6?@<> & ' ! 1 Descriptiסn !FFC+ , 0X @J 8 IP =FI ?@>? MFCK8>< GFNE<; 8::FI;@E> KF K?< JLG@1.2. ipd60r1k4c6.pdf Size:242K _inchange_semiconductor

IPD60R1K4C6
IPD60R1K4C6

isc N-Channel MOSFET Transistor IPD60R1K4C6,IIPD60R1K4C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V

 2.1. ipd60r1k0ce ipu60r1k0ce.pdf Size:2314K _infineon

IPD60R1K4C6
IPD60R1K4C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 600V CoolMOS™ CE Power Transistor IPx60R1K0CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ CE Power Transistor IPD60R1K0CE, IPU60R1K0CE DPAK IPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

2.2. ipd60r1k5ce ipu60r1k5ce.pdf Size:2307K _infineon

IPD60R1K4C6
IPD60R1K4C6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 600V CoolMOS™ CE Power Transistor IPx60R1K5CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ CE Power Transistor IPD60R1K5CE, IPU60R1K5CE DPAK IPAK 1 Description tab tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

 2.3. ipd60r1k5ce.pdf Size:242K _inchange_semiconductor

IPD60R1K4C6
IPD60R1K4C6

isc N-Channel MOSFET Transistor IPD60R1K5CE,IIPD60R1K5CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.5Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V

2.4. ipd60r1k0ce.pdf Size:242K _inchange_semiconductor

IPD60R1K4C6
IPD60R1K4C6

isc N-Channel MOSFET Transistor IPD60R1K0CE,IIPD60R1K0CE ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V G

Datasheet: IPD50N04S4-08 , IPD50N04S4-10 , IPD50N04S4L-08 , IPD50P04P4L-11 , IPD50R399CP , IPD50R520CP , IPD530N15N3G , IPD600N25N3G , IRF150 , IPD60R2K0C6 , IPD60R380C6 , IPD60R385CP , IPD60R3K3C6 , IPD60R450E6 , IPD60R520C6 , IPD60R520CP , IPD60R600C6 .

 

 
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