All MOSFET. IPD60R520CP Datasheet

 

IPD60R520CP MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD60R520CP

Marking Code: 6R520P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 66 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 6.8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 24 nC

Rise Time (tr): 12 nS

Drain-Source Capacitance (Cd): 32 pF

Maximum Drain-Source On-State Resistance (Rds): 0.52 Ohm

Package: TO252

IPD60R520CP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD60R520CP Datasheet (PDF)

0.1. ipd60r520cp.pdf Size:647K _infineon

IPD60R520CP
IPD60R520CP

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0.2. ipd60r520cp.pdf Size:242K _inchange_semiconductor

IPD60R520CP
IPD60R520CP

isc N-Channel MOSFET Transistor IPD60R520CP,IIPD60R520CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.52Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag

 4.1. ipd60r520c6 2.0.pdf Size:917K _infineon

IPD60R520CP
IPD60R520CP

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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