IPD65R600E6 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD65R600E6
Marking Code: 65E6600
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 63 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 7.3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 23 nC
Rise Time (tr): 8 nS
Drain-Source Capacitance (Cd): 30 pF
Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm
Package: TO252
IPD65R600E6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD65R600E6 Datasheet (PDF)
0.1. ipd65r600e6.pdf 
Size:1867K _infineon
MOSFET+ =L9D - PA
0.2. ipd65r600e6 ipp65r600e6 ipa65r600e6.pdf Size:919K _infineon
MOSFET Metall Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOSTM E6 Power Transistor IPx65R600E6 Data Sheet Rev. 2.3, 2018-02-28 Power Management & Multimarket 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 1 Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the supe
0.3. ipd65r600e6.pdf Size:242K _inchange_semiconductor
isc N-Channel MOSFET Transistor IPD65R600E6,IIPD65R600E6FEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
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