All MOSFET. IPD65R600E6 Datasheet


IPD65R600E6 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD65R600E6

Marking Code: 65E6600

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 63 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V

Maximum Drain Current |Id|: 7.3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 23 nC

Rise Time (tr): 8 nS

Drain-Source Capacitance (Cd): 30 pF

Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm

Package: TO252

IPD65R600E6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IPD65R600E6 Datasheet (PDF)

0.1. ipd65r600e6.pdf Size:1867K _infineon



0.2. ipd65r600e6 ipp65r600e6 ipa65r600e6.pdf Size:919K _infineon


MOSFET Metall Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOSTM E6 Power Transistor IPx65R600E6 Data Sheet Rev. 2.3, 2018-02-28 Power Management & Multimarket 650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 1 Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the supe

 0.3. ipd65r600e6.pdf Size:242K _inchange_semiconductor


isc N-Channel MOSFET Transistor IPD65R600E6,IIPD65R600E6FEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

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