All MOSFET. IPD800N06NG Datasheet

 

IPD800N06NG MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD800N06NG

Marking Code: 800N06N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 47 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 16 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 7 nC

Rise Time (tr): 38 nS

Drain-Source Capacitance (Cd): 75 pF

Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm

Package: TO252

IPD800N06NG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD800N06NG Datasheet (PDF)

4.1. ipd800n06n g.pdf Size:992K _infineon

IPD800N06NG
IPD800N06NG

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9.1. ipd80r1k0ce ipu80r1k0ce.pdf Size:2278K _infineon

IPD800N06NG
IPD800N06NG

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPx80R1K0CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPD80R1K0CE, IPU80R1K0CEDPAK IPAK1 DescriptiontabtabCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combine

9.2. ipd80n04s3-06 ds 1 0.pdf Size:184K _infineon

IPD800N06NG
IPD800N06NG

IPD80N04S3-06OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 5.2mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD80N04S3-06 PG-TO252-3-11 QN0406Max

 9.3. ipd80p03p4l-07 ds 10.pdf Size:165K _infineon

IPD800N06NG
IPD800N06NG

IPD80P03P4L-07OptiMOS-P2 Power-TransistorProduct SummaryV -30 VDSR 6.8mDS(on)I -80 ADFeatures P-channel - Logic Level - Enhancement modePG-TO252-3-11 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Intended for reverse battery protection Type Package Mar

9.4. ipd80r2k8ce ipu80r2k8ce.pdf Size:2275K _infineon

IPD800N06NG
IPD800N06NG

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPx80R2K8CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPD80R2K8CE, IPU80R2K8CEDPAK IPAK1 DescriptiontabtabCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combine

 9.5. ipd80r1k4ce ipu80r1k4ce.pdf Size:2292K _infineon

IPD800N06NG
IPD800N06NG

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPx80R1K4CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPD80R1K4CE, IPU80R1K4CEDPAK IPAK1 DescriptiontabtabCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combine

9.6. ipd80r2k8ce.pdf Size:243K _inchange_semiconductor

IPD800N06NG
IPD800N06NG

isc N-Channel MOSFET Transistor IPD80R2K8CE,IIPD80R2K8CEFEATURESStatic drain-source on-resistance:RDS(on)2.8Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

9.7. ipd80r1k0ce.pdf Size:243K _inchange_semiconductor

IPD800N06NG
IPD800N06NG

isc N-Channel MOSFET Transistor IPD80R1K0CE,IIPD80R1K0CEFEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag

Datasheet: IPD65R380C6 , IPD65R380E6 , IPD65R600C6 , IPD65R600E6 , IPD65R660CFD , IPD70P04P4-09 , IPD75N04S4-06 , IPD78CN10NG , STP75NF75 , IPD90N04S4-02 , IPD90N04S4-03 , IPD90N04S4-05 , IPD90P04P4-05 , IPD90R1K2C3 , IPG20N04S4-08 , IPG20N04S4-09 , IPG20N04S4-12 .

 

 
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