All MOSFET. IPD800N06NG Datasheet

 

IPD800N06NG MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD800N06NG

Marking Code: 800N06N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 47 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 16 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 7 nC

Rise Time (tr): 38 nS

Drain-Source Capacitance (Cd): 75 pF

Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm

Package: TO252

IPD800N06NG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD800N06NG Datasheet (PDF)

4.1. ipd800n06n g.pdf Size:992K _infineon

IPD800N06NG IPD800N06NG

$ " " $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeaturesD O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>=mWD n) m xO ' 270==4; 4=70=24@?4@0B8=6 B4"+ 2> 0B R C=;4AA >B74@E8A4 A?4285843jParameter SymbI Cnditin

9.1. ipd80r4k5p7.pdf Size:975K _infineon

IPD800N06NG IPD800N06NG

IPD80R4K5P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

9.2. ipd80r1k0ce ipu80r1k0ce.pdf Size:2278K _infineon

IPD800N06NG IPD800N06NG

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPx80R1K0CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPD80R1K0CE, IPU80R1K0CEDPAK IPAK1 DescriptiontabtabCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combine

 9.3. ipd80r360p7.pdf Size:972K _infineon

IPD800N06NG IPD800N06NG

IPD80R360P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

9.4. ipd80n04s3-06 ipd80n04s3-06 ds 1 0.pdf Size:184K _infineon

IPD800N06NG IPD800N06NG

IPD80N04S3-06OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 5.2mDS(on),maxI 90 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche testedType Package MarkingIPD80N04S3-06 PG-TO252-3-11 QN0406Max

 9.5. ipd80r600p7.pdf Size:957K _infineon

IPD800N06NG IPD800N06NG

IPD80R600P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

9.6. ipd80r280p7.pdf Size:953K _infineon

IPD800N06NG IPD800N06NG

IPD80R280P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

9.7. ipd80r3k3p7.pdf Size:970K _infineon

IPD800N06NG IPD800N06NG

IPD80R3K3P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

9.8. ipd80r450p7.pdf Size:1147K _infineon

IPD800N06NG IPD800N06NG

IPD80R450P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

9.9. ipd80r2k7c3a.pdf Size:510K _infineon

IPD800N06NG IPD800N06NG

Data Sheet IPD80R2k7C3ACoolMOSTM Power TransistorProduct Summary FeaturesVDS 800 V New revolutionary high voltage technologyRDS(on)max @ Tj = 25C 2.7 W Extreme dv/dt ratedQg,typ 12 nC High peak current capability Qualified according to AEC Q101 Green package (RoHS compliant), Pb-free lead plating, halogen free for mold compoundPG-TO252-3 Ultra

9.10. ipd80r900p7.pdf Size:961K _infineon

IPD800N06NG IPD800N06NG

IPD80R900P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

9.11. ipd80p03p4l-07 ds 10.pdf Size:165K _infineon

IPD800N06NG IPD800N06NG

IPD80P03P4L-07OptiMOS-P2 Power-TransistorProduct SummaryV -30 VDSR 6.8mDS(on)I -80 ADFeatures P-channel - Logic Level - Enhancement modePG-TO252-3-11 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche tested Intended for reverse battery protection Type Package Mar

9.12. ipd80r2k4p7.pdf Size:960K _infineon

IPD800N06NG IPD800N06NG

IPD80R2K4P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

9.13. ipd80r1k4p7.pdf Size:971K _infineon

IPD800N06NG IPD800N06NG

IPD80R1K4P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

9.14. ipd80r2k8ce ipu80r2k8ce.pdf Size:2275K _infineon

IPD800N06NG IPD800N06NG

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPx80R2K8CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPD80R2K8CE, IPU80R2K8CEDPAK IPAK1 DescriptiontabtabCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combine

9.15. ipd80r750p7.pdf Size:948K _infineon

IPD800N06NG IPD800N06NG

IPD80R750P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

9.16. ipd80r1k4ce ipu80r1k4ce.pdf Size:2292K _infineon

IPD800N06NG IPD800N06NG

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPx80R1K4CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPD80R1K4CE, IPU80R1K4CEDPAK IPAK1 DescriptiontabtabCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combine

9.17. ipd80r2k0p7.pdf Size:964K _infineon

IPD800N06NG IPD800N06NG

IPD80R2K0P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

9.18. ipd80r2k8ce.pdf Size:243K _inchange_semiconductor

IPD800N06NG IPD800N06NG

isc N-Channel MOSFET Transistor IPD80R2K8CE,IIPD80R2K8CEFEATURESStatic drain-source on-resistance:RDS(on)2.8Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

9.19. ipd80r1k0ce.pdf Size:243K _inchange_semiconductor

IPD800N06NG IPD800N06NG

isc N-Channel MOSFET Transistor IPD80R1K0CE,IIPD80R1K0CEFEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag

9.20. ipd80p03p4l-07.pdf Size:309K _inchange_semiconductor

IPD800N06NG IPD800N06NG

isc P-Channel MOSFET Transistor IPD80P03P4L-07FEATURESDrain Current I = -80A@ T =25D CDrain Source Voltage: V = -30V(Min)DSSStatic Drain-Source On-Resistance: R = 6.8m(Max) @V = -10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4435 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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