All MOSFET. IPD800N06NG Datasheet

 

IPD800N06NG MOSFET. Datasheet pdf. Equivalent

Type Designator: IPD800N06NG

Marking Code: 800N06N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 47 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 16 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 7 nC

Rise Time (tr): 38 nS

Drain-Source Capacitance (Cd): 75 pF

Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm

Package: TO252

IPD800N06NG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD800N06NG Datasheet (PDF)

4.1. ipd800n06n g.pdf Size:992K _infineon

IPD800N06NG
IPD800N06NG

 $ " " ® $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features D O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>= mW D n) m x O ' 270==4; 4=70=24< 4=B =>@< 0; ;4D4; 1 D O R >?4@0B8=6 B4< ?4@0BC@4 O D0;0=274 @0B43 O )1 5@44 ;403 ?;0B8=6 * >"+ 2>< ?;80=B Type #) ' ' ! Package G‐ O ‐ Marking N N !-C59@9 =-?5:3> 0B R C=;4AA >B74@E8A4 A?4285843 j Parameter SymbסI Cסnditiסn

9.1. ipd80r1k0ce ipu80r1k0ce.pdf Size:2278K _infineon

IPD800N06NG
IPD800N06NG

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 800V CoolMOS™ CE Power Transistor IPx80R1K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS™ CE Power Transistor IPD80R1K0CE, IPU80R1K0CE DPAK IPAK 1 Description tab tab CoolMOS™ CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combine

9.2. ipd80n04s3-06 ds 1 0.pdf Size:184K _infineon

IPD800N06NG
IPD800N06NG

IPD80N04S3-06 OptiMOS®-T Power-Transistor Product Summary V 40 V DS R 5.2 mΩ DS(on),max I 90 A D Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested Type Package Marking IPD80N04S3-06 PG-TO252-3-11 QN0406 Max

 9.3. ipd80p03p4l-07 ds 10.pdf Size:165K _infineon

IPD800N06NG
IPD800N06NG

 IPD80P03P4L-07 OptiMOS®-P2 Power-Transistor Product Summary V -30 V DS R 6.8 mΩ DS(on) I -80 A D Features • P-channel - Logic Level - Enhancement mode PG-TO252-3-11 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested • Intended for reverse battery protection Type Package Mar

9.4. ipd80r2k8ce ipu80r2k8ce.pdf Size:2275K _infineon

IPD800N06NG
IPD800N06NG

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 800V CoolMOS™ CE Power Transistor IPx80R2K8CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS™ CE Power Transistor IPD80R2K8CE, IPU80R2K8CE DPAK IPAK 1 Description tab tab CoolMOS™ CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combine

 9.5. ipd80r1k4ce ipu80r1k4ce.pdf Size:2292K _infineon

IPD800N06NG
IPD800N06NG

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 800V CoolMOS™ CE Power Transistor IPx80R1K4CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS™ CE Power Transistor IPD80R1K4CE, IPU80R1K4CE DPAK IPAK 1 Description tab tab CoolMOS™ CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combine

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